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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - Array

Transistè - IGBTs - Array

Pwodwi 4 yo te jwenn

Lis pwodwi yo

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Konpare Imaj Separe # Manifakti Deskripsyon Envantè ECAD modèl RoHS Kouran - Koupe Cutè (Max) Pakèt Nimewo pwodwi baz NTC Thermistor Antre Kapasite Antre (Cies) @ Vce Vce (sou) (Max) @ Vge, Ic IGBT Kalite Seri Voltage - Pèseptè Emitter pann (Max) Kouran - Pèseptè (Ic) (Max) Founisè Aparèy pake Pake / Ka Konfigirasyon Pouvwa - Max Mounting Kalite Operating Tanperati Kantite
FII40-06D FII40-06D IXYS IGBT H BRIDGE 600V 40A I4PAK5 Nan stok3980 pcs 600 µA Bulk FII40 No Standard 1.6 nF @ 25 V 2.2V @ 15V, 25A NPT - 600 V 40 A ISOPLUS i4-PAC™ i4-Pac™-5 Half Bridge 125 W Through Hole -55°C ~ 150°C (TJ)
FII30-12E IXYS IGBT H BRIDGE 1200V 33A I4PAK5 Nan stok4050 pcs 200 µA Tube FII30 No Standard 1.2 nF @ 25 V 2.9V @ 15V, 20A NPT - 1200 V 33 A ISOPLUS i4-PAC™ i4-Pac™-5 Half Bridge 150 W Through Hole -55°C ~ 150°C (TJ)
FII24N17AH1 IXYS IGBT H BRIDGE 1700V 18A I4PAK5 Nan stok4150 pcs 100 µA Box FII24N17 No Standard 2.4 nF @ 25 V 6V @ 15V, 16A NPT - 1700 V 18 A ISOPLUS i4-PAC™ i4-Pac™-5 Half Bridge 140 W Through Hole -55°C ~ 150°C (TJ)
FII30-06D IXYS IGBT H BRIDGE 600V 30A I4PAK5 Nan stok5220 pcs 600 µA Tube FII30 No Standard 1.1 nF @ 25 V 2.4V @ 15V, 20A NPT - 600 V 30 A ISOPLUS i4-PAC™ i4-Pac™-5 Half Bridge 100 W Through Hole -55°C ~ 150°C (TJ)
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