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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleHGTP12N60C3D
HGTP12N60C3D Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HGTP12N60C3D - onsemi

Manifakti Nimewo Pati
HGTP12N60C3D
Manifakti
onsemi
Allelco Nimewo Pati
32D-HGTP12N60C3D
ECAD modèl
Pati Deskripsyon
IGBT 600V 24A TO220-3
Deskripsyon detaye
Pake
TO-220-3
Done fèy
TO220B03 Pkg Drawing.pdf
HGTP12N60C3D, HGT1S12N60C3DS.pdf
RoHs Status
Nan stok: 3780

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon HGTP12N60C3D Tech
onsemi - HGTP12N60C3D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - HGTP12N60C3D

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.2V @ 15V, 15A  
Kondisyon tès -  
Td (sou / sou) @ 25 ° C -  
Oblije chanje enèji 380µJ (on), 900µJ (off)  
Founisè Aparèy pake TO-220-3  
Seri -  
Tan rekiperasyon ranvèse (trr) 40 ns  
Pouvwa - Max 104 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-3  
Pakèt Tube  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 48 nC  
Kouran - Pèseptè Pulsed (Icm) 96 A  
Kouran - Pèseptè (Ic) (Max) 24 A  
Nimewo pwodwi baz HGTP12N60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi HGTP12N60C3D.

Pwodwi atribi HGTP12N60C3D HGTP12N60C3D HGTP14N36G3VL HGTP12N60A4D
Nimewo Pati HGTP12N60C3D HGTP12N60C3D HGTP14N36G3VL HGTP12N60A4D
Manifakti onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Pouvwa - Max 104 W 104 W 100 W 167 W
Kouran - Pèseptè Pulsed (Icm) 96 A 96 A - 96 A
Kouran - Pèseptè (Ic) (Max) 24 A 24 A 18 A 54 A
Gate Charge 48 nC 48 nC 24 nC 78 nC
Seri - - - -
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220AB TO-220-3
Td (sou / sou) @ 25 ° C - - - 17ns/96ns
Kalite Antre Standard Standard Logic Standard
Oblije chanje enèji 380µJ (on), 900µJ (off) 380µJ (on), 900µJ (off) - 55µJ (on), 50µJ (off)
Kondisyon tès - - - 390V, 12A, 10Ohm, 15V
Vce (sou) (Max) @ Vge, Ic 2.2V @ 15V, 15A 2.2V @ 15V, 15A 2.2V @ 5V, 14A 2.7V @ 15V, 12A
Pakèt Tube Bulk Bulk Bulk
Tan rekiperasyon ranvèse (trr) 40 ns 40 ns - 30 ns
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
IGBT Kalite - - Trench -
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 390 V 600 V
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Nimewo pwodwi baz HGTP12N60 - - -

HGTP12N60C3D fich PDF

Download HGTP12N60C3D PDF fich ak dokiman onsemi pou HGTP12N60C3D - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf
PCN obsolescence/ eol
Mult Dev EOL 29/Jan/2021.pdf
Fich
TO220B03 Pkg Drawing.pdf HGTP12N60C3D, HGT1S12N60C3DS.pdf
Asanble PCN/orijin
Mult Dev Assembly/Mat Chg 16/Jan/2020.pdf

Shipment

Tan livrezon

Nan-stock atik yo ka anbake nan lespas 24 èdtan.Gen kèk pati ki pral ranje pou livrezon nan 1-2 jou soti nan dat la tout atik rive nan depo nou yo.Ak Allelco bato lòd yon fwa nan yon jounen nan sou 17:00, eksepte Dimanch.Yon fwa byen yo ap anbake, tan an livrezon estime depann sou metòd yo anbake ak destinasyon livrezon.Tablo ki anba a montre yo se tan an lojistik pou kèk peyi komen.

Pri livrezon

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Metòd livrezon

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2.00kg-3.00kg USD $ 50.00 - USD $ 100.00
Remak:
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
HGTP12N60C3D Image

HGTP12N60C3D

onsemi
32D-HGTP12N60C3D

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