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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNTHS5443T1G
NTHS5443T1G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NTHS5443T1G - onsemi

Manifakti Nimewo Pati
NTHS5443T1G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NTHS5443T1G
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 3.6A CHIPFET
Deskripsyon detaye
Pake
8-SMD, Flat Lead
Done fèy
NTHS5443.pdf
RoHs Status
Nan stok: 4450

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NTHS5443T1G Tech
onsemi - NTHS5443T1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NTHS5443T1G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 600mV @ 250µA (Min)  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ChipFET™  
Seri -  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 3.6A, 4.5V  
Dissipasyon pouvwa (Max) 1.3W (Ta)  
Pake / Ka 8-SMD, Flat Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.6A (Ta)  
Nimewo pwodwi baz NTHS5443  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NTHS5443T1G.

Pwodwi atribi NTHS5443T1G NTHS5404T1 NTHS4111PT1 NTHS5441T1
Nimewo Pati NTHS5443T1G NTHS5404T1 NTHS4111PT1 NTHS5441T1
Manifakti onsemi onsemi onsemi onsemi
Founisè Aparèy pake ChipFET™ ChipFET™ - ChipFET™
Fèt tip P-Channel N-Channel - P-Channel
Pakèt Tape & Reel (TR) Bulk Bulk Bulk
Pòtay Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 18 nC @ 4.5 V - 22 nC @ 4.5 V
Vgs (th) (Max) @ Id 600mV @ 250µA (Min) - - 1.2V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount - Surface Mount
Nimewo pwodwi baz NTHS5443 NTHS54 - NTHS54
Kouran - Kontini Drain (Id) @ 25 ° C 3.6A (Ta) 5.2A (Ta) - 3.9A (Ta)
Rds Sou (Max) @ Id, Vgs 65mOhm @ 3.6A, 4.5V - - 46mOhm @ 3.9A, 4.5V
Drenaj Sous Voltage (Vdss) 20 V 20 V - 20 V
Dissipasyon pouvwa (Max) 1.3W (Ta) - - -
Vgs (Max) ±12V ±12V - -
Pake / Ka 8-SMD, Flat Lead 8-SMD, Flat Lead - 8-SMD, Flat Lead
FET Feature - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V - -
Seri - - * -

NTHS5443T1G fich PDF

Download NTHS5443T1G PDF fich ak dokiman onsemi pou NTHS5443T1G - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN anbalaj
Covering Tape/Material Chg 20/May/2016.pdf
PCN obsolescence/ eol
Mult Dev EOL 08/Jul/2021.pdf
Fich
NTHS5443.pdf

Shipment

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onsemi
32D-NTHS5443T1G

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