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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNVD5862NT4G
NVD5862NT4G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

NVD5862NT4G - onsemi

Manifakti Nimewo Pati
NVD5862NT4G
Manifakti
onsemi
Allelco Nimewo Pati
32D-NVD5862NT4G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 18A/98A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
NVD5862N.pdf
RoHs Status
Nan stok: 3840

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon NVD5862NT4G Tech
onsemi - NVD5862NT4G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - NVD5862NT4G

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DPAK  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 5.7mOhm @ 48A, 10V  
Dissipasyon pouvwa (Max) 4.1W (Ta), 115W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6000 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 82 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Ta), 98A (Tc)  
Nimewo pwodwi baz NVD586  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi NVD5862NT4G.

Pwodwi atribi NVD5862NT4G NVD5806NT4G NVD5865NLT4G NVD5863NLT4G
Nimewo Pati NVD5862NT4G NVD5806NT4G NVD5865NLT4G NVD5863NLT4G
Manifakti onsemi onsemi onsemi onsemi
Rds Sou (Max) @ Id, Vgs 5.7mOhm @ 48A, 10V 19mOhm @ 15A, 10V 16mOhm @ 19A, 10V 7.1mOhm @ 41A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Dissipasyon pouvwa (Max) 4.1W (Ta), 115W (Tc) 40W (Tc) 3.1W (Ta), 71W (Tc) 3.1W (Ta), 96W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Ta), 98A (Tc) 33A (Tc) 10A (Ta), 46A (Tc) 14.9A (Ta), 82A (Tc)
Vgs (th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 6000 pF @ 25 V 860 pF @ 25 V 1400 pF @ 25 V 3850 pF @ 25 V
Nimewo pwodwi baz NVD586 NVD580 NVD586 NVD586
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 38 nC @ 10 V 29 nC @ 10 V 70 nC @ 10 V
Founisè Aparèy pake DPAK DPAK DPAK DPAK
Drenaj Sous Voltage (Vdss) 60 V 40 V 60 V 60 V
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)

NVD5862NT4G fich PDF

Download NVD5862NT4G PDF fich ak dokiman onsemi pou NVD5862NT4G - onsemi.

Enfòmasyon sou anviwònman an
onsemi RoHS.pdf
PCN obsolescence/ eol
Mult Dev EOL 16/Jul/2019.pdf Mult Dev EOL 06/Oct/2021.pdf Mult Dev EOL 24/Jul/2019.pdf
Asanble PCN/orijin
Wafer Fab Capacity 27/Jul/2020.pdf
PCN konsepsyon/spesifikasyon
Mold Compound Revision 24/Apr/2015.pdf Mold Compound Update 25/Feb/2015.pdf
Fich
NVD5862N.pdf

Shipment

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32D-NVD5862NT4G

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