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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRFD16N05LSM9A
RFD16N05LSM9A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RFD16N05LSM9A - onsemi

Manifakti Nimewo Pati
RFD16N05LSM9A
Manifakti
onsemi
Allelco Nimewo Pati
32D-RFD16N05LSM9A
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 50V 16A TO252AA
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
RFD16N05L/LSM.pdf
RoHs Status
Nan stok: 77380

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RFD16N05LSM9A Tech
onsemi - RFD16N05LSM9A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak onsemi - RFD16N05LSM9A

Pwodwi atribi Valè atribi  
Manifakti onsemi  
Vgs (th) (Max) @ Id 2V @ 250mA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-252AA  
Seri -  
Rds Sou (Max) @ Id, Vgs 47mOhm @ 16A, 5V  
Dissipasyon pouvwa (Max) 60W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 80 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V  
Drenaj Sous Voltage (Vdss) 50 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc)  
Nimewo pwodwi baz RFD16N05  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou onsemi RFD16N05LSM9A.

Pwodwi atribi RFD16N05LSM9A RFD16N05SM9A RFD16N05LSM RFD16N05L
Nimewo Pati RFD16N05LSM9A RFD16N05SM9A RFD16N05LSM RFD16N05L
Manifakti onsemi Fairchild Semiconductor Harris Corporation Harris Corporation
Founisè Aparèy pake TO-252AA TO-252, (D-Pak) TO-252AA TO-251AA
Pòtay Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 20 V 80 nC @ 10 V 80 nC @ 10 V
Pakèt Tape & Reel (TR) Bulk Tube Bulk
Vgs (Max) ±10V ±20V ±10V ±10V
Drenaj Sous Voltage (Vdss) 50 V 50 V 50 V 50 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V 10V 4V, 5V 4V, 5V
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA
Dissipasyon pouvwa (Max) 60W (Tc) 72W (Tc) 60W (Tc) 60W (Tc)
Seri - - - -
Vgs (th) (Max) @ Id 2V @ 250mA 4V @ 250µA 2V @ 250mA 2V @ 250mA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc) 16A (Tc) 16A (Tc) 16A (Tc)
Rds Sou (Max) @ Id, Vgs 47mOhm @ 16A, 5V 47mOhm @ 16A, 10V 47mOhm @ 16A, 5V 47mOhm @ 16A, 5V
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz RFD16N05 - RFD16 -

RFD16N05LSM9A fich PDF

Download RFD16N05LSM9A PDF fich ak dokiman onsemi pou RFD16N05LSM9A - onsemi.

Enfòmasyon sou anviwònman an
onsemi REACH.pdf onsemi RoHS.pdf
PCN konsepsyon/spesifikasyon
Logo 17/Aug/2017.pdf Description Chg 01/Apr/2016.pdf
PCN anbalaj
Mult Devices 24/Oct/2017.pdf Tape and Box/Reel Barcode Update 07/Aug/2014.pdf
Asanble PCN/orijin
Assembly Change 28/May/2023.pdf
Fich
RFD16N05L/LSM.pdf

Shipment

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Sètifikasyon & Manm

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RFD16N05LSM9A Image

RFD16N05LSM9A

onsemi
32D-RFD16N05LSM9A

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