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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIPB020N08N5ATMA1
IPB020N08N5ATMA1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IPB020N08N5ATMA1 - Infineon Technologies

Manifakti Nimewo Pati
IPB020N08N5ATMA1
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IPB020N08N5ATMA1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 120A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IPB020N08N5ATMA1.pdf
RoHs Status
Nan stok: 12375

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IPB020N08N5ATMA1 Tech
Infineon Technologies - IPB020N08N5ATMA1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IPB020N08N5ATMA1

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 3.8V @ 208µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO263-3  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 2mOhm @ 100A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 12100 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 166 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)  
Nimewo pwodwi baz IPB020  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IPB020N08N5ATMA1.

Pwodwi atribi IPB020N08N5ATMA1 IPB020N10N5ATMA1 IPB021N06N3G IPB019N08N3GATMA1
Nimewo Pati IPB020N08N5ATMA1 IPB020N10N5ATMA1 IPB021N06N3G IPB019N08N3GATMA1
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 6V, 10V 10V 6V, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc) 120A (Tc) 120A (Tc) 180A (Tc)
Vgs (th) (Max) @ Id 3.8V @ 208µA 3.8V @ 270µA 4V @ 196µA 3.5V @ 270µA
Dissipasyon pouvwa (Max) 300W (Tc) 375W (Tc) 250W (Tc) 300W (Tc)
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 2mOhm @ 100A, 10V 2mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V 1.9mOhm @ 100A, 10V
Drenaj Sous Voltage (Vdss) 80 V 100 V 60 V 80 V
Pòtay Charge (Qg) (Max) @ Vgs 166 nC @ 10 V 210 nC @ 10 V 275 nC @ 10 V 206 nC @ 10 V
Founisè Aparèy pake PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-7
Nimewo pwodwi baz IPB020 IPB020 - IPB019
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri OptiMOS™ OptiMOS™ OptiMOS™ 3 OptiMOS™
Kapasite Antre (Ciss) (Max) @ Vds 12100 pF @ 40 V 15600 pF @ 50 V 23000 pF @ 30 V 14200 pF @ 40 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IPB020N08N5ATMA1 fich PDF

Download IPB020N08N5ATMA1 PDF fich ak dokiman Infineon Technologies pou IPB020N08N5ATMA1 - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Dev Pkg Box Chg 3/Jan/2018.pdf
Asanble PCN/orijin
OptiMOS A/T Chgs 2/Dec/2021.pdf

Shipment

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Sètifikasyon & Manm

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IPB020N08N5ATMA1

Infineon Technologies
32D-IPB020N08N5ATMA1

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