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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF6631TRPBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF6631TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF6631TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF6631TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 13A DIRECTFET
Deskripsyon detaye
Pake
DirectFET™ Isometric SQ
Done fèy
IRF6631(TR)PbF.pdf
Nan stok: 5110

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF6631TRPBF Tech
Infineon Technologies - IRF6631TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF6631TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 25µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DIRECTFET™ SQ  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 7.8mOhm @ 13A, 10V  
Dissipasyon pouvwa (Max) 2.2W (Ta), 42W (Tc)  
Pake / Ka DirectFET™ Isometric SQ  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1450 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta), 57A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF6631TRPBF.

Pwodwi atribi IRF6631TRPBF IRF6629TRPBF IRF6623TRPBF IRF6628TRPBF
Nimewo Pati IRF6631TRPBF IRF6629TRPBF IRF6623TRPBF IRF6628TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Pake / Ka DirectFET™ Isometric SQ DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MX
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta), 57A (Tc) 29A (Ta), 180A (Tc) 16A (Ta), 55A (Tc) 27A (Ta), 160A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake DIRECTFET™ SQ DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MX
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Vgs (Max) ±20V ±20V ±20V ±20V
Drenaj Sous Voltage (Vdss) 30 V 25 V 20 V 25 V
Rds Sou (Max) @ Id, Vgs 7.8mOhm @ 13A, 10V 2.1mOhm @ 29A, 10V 5.7mOhm @ 15A, 10V 2.5mOhm @ 27A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 1450 pF @ 15 V 4260 pF @ 13 V 1360 pF @ 10 V 3770 pF @ 15 V
FET Feature - - - -
Dissipasyon pouvwa (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 100W (Tc) 1.4W (Ta), 42W (Tc) 2.8W (Ta), 96W (Tc)
Vgs (th) (Max) @ Id 2.35V @ 25µA 2.35V @ 100µA 2.2V @ 250µA 2.35V @ 100µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 51 nC @ 4.5 V 17 nC @ 4.5 V 47 nC @ 4.5 V
Fèt tip N-Channel N-Channel N-Channel N-Channel

IRF6631TRPBF fich PDF

Download IRF6631TRPBF PDF fich ak dokiman Infineon Technologies pou IRF6631TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN anbalaj
Package Drawing Update 19/Aug/2015.pdf
Asanble PCN/orijin
DirectFET Backend Wafer Processing 23/Oct/2013.pdf
PCN Lòt
MSL Update 20/Feb/2014.pdf
Fich
IRF6631(TR)PbF.pdf
PCN obsolescence/ eol
Mult Device EOL 06/Sep/2016.pdf

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IRF6631TRPBF

Infineon Technologies
32D-IRF6631TRPBF

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