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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF6644TR1PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF6644TR1PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF6644TR1PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF6644TR1PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 10.3A DIRECTFET
Deskripsyon detaye
Pake
DirectFET™ Isometric MN
Done fèy
IRF6644TR1PBF.pdf
Nan stok: 5170

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF6644TR1PBF Tech
Infineon Technologies - IRF6644TR1PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF6644TR1PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4.8V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DIRECTFET™ MN  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V  
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc)  
Pake / Ka DirectFET™ Isometric MN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2210 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10.3A (Ta), 60A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF6644TR1PBF.

Pwodwi atribi IRF6644TR1PBF IRF6641TRPBF IRF6645TRPBF IRF6643TRPBF
Nimewo Pati IRF6644TR1PBF IRF6641TRPBF IRF6645TRPBF IRF6643TRPBF
Manifakti Infineon Technologies International Rectifier Infineon Technologies Infineon Technologies
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Pake / Ka DirectFET™ Isometric MN DirectFET™ Isometric MZ DirectFET™ Isometric SJ DirectFET™ Isometric MZ
Vgs (th) (Max) @ Id 4.8V @ 150µA 4.9V @ 150µA 4.9V @ 50µA 4.9V @ 150µA
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake DIRECTFET™ MN DIRECTFET™ MZ DIRECTFET™ SJ DIRECTFET™ MZ
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Pòtay Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 48 nC @ 10 V 20 nC @ 10 V 55 nC @ 10 V
Drenaj Sous Voltage (Vdss) 100 V 200 V 100 V 150 V
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V 59.9mOhm @ 5.5A, 10V 35mOhm @ 5.7A, 10V 34.5mOhm @ 7.6A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 10.3A (Ta), 60A (Tc) 4.6A (Ta), 26A (Tc) 5.7A (Ta), 25A (Tc) 6.2A (Ta), 35A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 2210 pF @ 25 V 2290 pF @ 25 V 890 pF @ 25 V 2340 pF @ 25 V
FET Feature - - - -

IRF6644TR1PBF fich PDF

Download IRF6644TR1PBF PDF fich ak dokiman Infineon Technologies pou IRF6644TR1PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 20/Dec/2013.pdf
PCN Lòt
MSL Update 20/Feb/2014.pdf
Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf

Shipment

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IRF6644TR1PBF

Infineon Technologies
32D-IRF6644TR1PBF

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