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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7203TR
IRF7203TR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7203TR - Infineon Technologies

Manifakti Nimewo Pati
IRF7203TR
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7203TR
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 4.3A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IRF7203TR.pdf
Nan stok: 4520

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Kantite

Espesifikasyon

Espesifikasyon IRF7203TR Tech
Infineon Technologies - IRF7203TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7203TR

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id -  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 2A, 10V  
Dissipasyon pouvwa (Max) -  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 750 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.3A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7203TR.

Pwodwi atribi IRF7203TR IRF7205PBF IRF7202TR IRF7201TRPBF
Nimewo Pati IRF7203TR IRF7205PBF IRF7202TR IRF7201TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Rds Sou (Max) @ Id, Vgs 100mOhm @ 2A, 10V 70mOhm @ 4.6A, 10V 250mOhm @ 1A, 10V 30mOhm @ 7.3A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 28 nC @ 10 V
Vgs (th) (Max) @ Id - 3V @ 250µA 3V @ 250µA 1V @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Operating Tanperati - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Drenaj Sous Voltage (Vdss) 20 V 30 V 20 V 30 V
Founisè Aparèy pake 8-SO 8-SO 8-SO 8-SO
Kapasite Antre (Ciss) (Max) @ Vds 750 pF @ 20 V 870 pF @ 10 V 270 pF @ 20 V 550 pF @ 25 V
FET Feature - - - -
Dissipasyon pouvwa (Max) - 2.5W (Tc) 1.6W (Ta), 2.5W (Tc) 2.5W (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 4.3A (Ta) 4.6A (Ta) 2.5A (Tc) 7.3A (Tc)
Fèt tip P-Channel P-Channel P-Channel N-Channel

IRF7203TR fich PDF

Download IRF7203TR PDF fich ak dokiman Infineon Technologies pou IRF7203TR - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf

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  1. Telefòn
    +00852 9146 4856

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IRF7203TR Image

IRF7203TR

Infineon Technologies
32D-IRF7203TR

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