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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7534D1PBF
IRF7534D1PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF7534D1PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7534D1PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7534D1PBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 4.3A MICRO8
Deskripsyon detaye
Pake
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Done fèy
IRF7534D1PbF.pdf
Nan stok: 4820

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Kantite

Espesifikasyon

Espesifikasyon IRF7534D1PBF Tech
Infineon Technologies - IRF7534D1PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7534D1PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.2V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro8™  
Seri FETKY™  
Rds Sou (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V  
Dissipasyon pouvwa (Max) 1.25W (Ta)  
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1066 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 5 V  
Fèt tip P-Channel  
FET Feature Schottky Diode (Isolated)  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.3A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7534D1PBF.

Pwodwi atribi IRF7534D1PBF IRF7534D1TR IRF7526D1TRPBF IRF7580MTRPBF
Nimewo Pati IRF7534D1PBF IRF7534D1TR IRF7526D1TRPBF IRF7580MTRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies International Rectifier
Dissipasyon pouvwa (Max) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta) 115W (Tc)
Founisè Aparèy pake Micro8™ Micro8™ Micro8™ DirectFET™ Isometric ME
Kouran - Kontini Drain (Id) @ 25 ° C 4.3A (Ta) 4.3A (Ta) 2A (Ta) 114A (Tc)
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated) -
Drenaj Sous Voltage (Vdss) 20 V 20 V 30 V 60 V
Kapasite Antre (Ciss) (Max) @ Vds 1066 pF @ 10 V 1066 pF @ 10 V 180 pF @ 25 V 6510 pF @ 25 V
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) DirectFET™ Isometric ME
Vgs (Max) ±12V ±12V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 4.5V, 10V 6V, 10V
Fèt tip P-Channel P-Channel P-Channel N-Channel
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Seri FETKY™ FETKY™ FETKY™ StrongIRFET™
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Bulk
Pòtay Charge (Qg) (Max) @ Vgs 15 nC @ 5 V 15 nC @ 5 V 11 nC @ 10 V 180 nC @ 10 V
Vgs (th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1V @ 250µA 3.7V @ 150µA
Rds Sou (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V 55mOhm @ 4.3A, 4.5V 200mOhm @ 1.2A, 10V 3.6mOhm @ 70A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IRF7534D1PBF fich PDF

Download IRF7534D1PBF PDF fich ak dokiman Infineon Technologies pou IRF7534D1PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Fich
IRF7534D1PbF.pdf

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Infineon Technologies
32D-IRF7534D1PBF

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