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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF7604TRPBF
IRF7604TRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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IRF7604TRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRF7604TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF7604TRPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 3.6A MICRO8
Pake
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Done fèy
IRF7604PbF.pdf
Sètifikasyon nou an
Nan stok: 4660

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRF7604TRPBF Tech
Infineon Technologies - IRF7604TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF7604TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 700mV @ 250µA (Min)  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake Micro8™  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V  
Dissipasyon pouvwa (Max) 1.8W (Ta)  
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 590 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.6A (Ta)  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 2 (1 Year)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF7604TRPBF.

Pwodwi atribi IRF7604TRPBF IRF7603TR IRF7604TR IRF7603TRPBF
Nimewo Pati IRF7604TRPBF IRF7603TR IRF7604TR IRF7603TRPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Seri HEXFET® - - HEXFET®
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 27 nC @ 10 V 20 nC @ 4.5 V 27 nC @ 10 V
Pakèt Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 20 V 30 V 20 V 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Vgs (Max) ±12V - - ±20V
Pake / Ka 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Dissipasyon pouvwa (Max) 1.8W (Ta) - - 1.8W (Ta)
Rds Sou (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V 35mOhm @ 3.7A, 10V 90mOhm @ 2.4A, 4.5V 35mOhm @ 3.7A, 10V
Fèt tip P-Channel N-Channel P-Channel N-Channel
FET Feature - - - -
Vgs (th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 3.6A (Ta) 5.6A (Ta) 3.6A (Ta) 5.6A (Ta)
Founisè Aparèy pake Micro8™ Micro8™ Micro8™ Micro8™
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.7V, 4.5V - - 4.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 590 pF @ 15 V 520 pF @ 25 V 590 pF @ 15 V 520 pF @ 25 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IRF7604TRPBF fich PDF

Download IRF7604TRPBF PDF fich ak dokiman Infineon Technologies pou IRF7604TRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Fich
IRF7604PbF.pdf

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IRF7604TRPBF Image

IRF7604TRPBF

Infineon Technologies
32D-IRF7604TRPBF

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