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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR4105ZTRPBF
IRFR4105ZTRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR4105ZTRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRFR4105ZTRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFR4105ZTRPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 30A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR4105ZTRPBF.pdf
RoHs Status
Nan stok: 87930

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Kantite

Espesifikasyon

Espesifikasyon IRFR4105ZTRPBF Tech
Infineon Technologies - IRFR4105ZTRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFR4105ZTRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 48W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 740 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc)  
Nimewo pwodwi baz IRFR4105  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFR4105ZTRPBF.

Pwodwi atribi IRFR4105ZTRPBF IRFR420 IRFR420ATRLPBF IRFR420APBF
Nimewo Pati IRFR4105ZTRPBF IRFR420 IRFR420ATRLPBF IRFR420APBF
Manifakti Infineon Technologies Harris Corporation Vishay Siliconix Vishay Siliconix
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tube
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc) 2.4A (Tc) 3.3A (Tc) 3.3A (Tc)
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Seri HEXFET® - - -
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 740 pF @ 25 V 360 pF @ 25 V 340 pF @ 25 V 340 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 19 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V
Dissipasyon pouvwa (Max) 48W (Tc) 2.5W (Ta), 42W (Tc) 83W (Tc) 83W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 55 V 500 V 500 V 500 V
Nimewo pwodwi baz IRFR4105 IRFR420 IRFR420 IRFR420
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) ±20V ±20V ±30V ±30V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V 3Ohm @ 1.4A, 10V 3Ohm @ 1.5A, 10V 3Ohm @ 1.5A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

IRFR4105ZTRPBF fich PDF

Download IRFR4105ZTRPBF PDF fich ak dokiman Infineon Technologies pou IRFR4105ZTRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
Asanble PCN/orijin
Backend Wafer Transfer 23/Oct/2013.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf Mult Dev Lot No Format Chg 6/Apr/2018.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf

Shipment

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Sètifikasyon & Manm

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IRFR4105ZTRPBF Image

IRFR4105ZTRPBF

Infineon Technologies
32D-IRFR4105ZTRPBF

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