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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR9120NPBF
International Rectifier
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR9120NPBF - International Rectifier

Manifakti Nimewo Pati
IRFR9120NPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFR9120NPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 6.6A TO252
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR9120NPBF.pdf
RoHs Status
Nan stok: 4880

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRFR9120NPBF Tech
International Rectifier - IRFR9120NPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak International Rectifier - IRFR9120NPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-TO252  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 480mOhm @ 3.9A, 10V  
Dissipasyon pouvwa (Max) 40W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6.6A (Tc)  
Nimewo pwodwi baz IRFR9120  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou International Rectifier IRFR9120NPBF.

Pwodwi atribi IRFR9120NPBF IRFR9120PBF IRFR9110TRLPBF IRFR9120TR
Nimewo Pati IRFR9120NPBF IRFR9120PBF IRFR9110TRLPBF IRFR9120TR
Manifakti International Rectifier Vishay Siliconix Vishay Siliconix Vishay Siliconix
Vgs (Max) ±20V ±20V ±20V ±20V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Pakèt Bulk Tube Tape & Reel (TR) Tape & Reel (TR)
Seri HEXFET® - - -
Pòtay Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 18 nC @ 10 V 8.7 nC @ 10 V 18 nC @ 10 V
Nimewo pwodwi baz IRFR9120 IRFR9120 IRFR9110 IRFR9120
Dissipasyon pouvwa (Max) 40W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 42W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V 390 pF @ 25 V 200 pF @ 25 V 390 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 480mOhm @ 3.9A, 10V 600mOhm @ 3.4A, 10V 1.2Ohm @ 1.9A, 10V 600mOhm @ 3.4A, 10V
Founisè Aparèy pake PG-TO252 D-Pak D-Pak D-Pak
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 6.6A (Tc) 5.6A (Tc) 3.1A (Tc) 5.6A (Tc)

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
International Rectifier

IRFR9120NPBF

International Rectifier
32D-IRFR9120NPBF

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