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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFSL4127PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFSL4127PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFSL4127PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFSL4127PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 72A TO262
Deskripsyon detaye
Pake
TO-262-3 Long Leads, I²Pak, TO-262AA
Done fèy
IRFSL4127PBF.pdf
RoHs Status
Nan stok: 14320

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFSL4127PBF Tech
Infineon Technologies - IRFSL4127PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFSL4127PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-262  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 22mOhm @ 44A, 10V  
Dissipasyon pouvwa (Max) 375W (Tc)  
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 5380 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 150 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 72A (Tc)  
Nimewo pwodwi baz IRFSL4127  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFSL4127PBF.

Pwodwi atribi IRFSL4127PBF IRFSL4020PBF IRFSL3207 IRFSL4010PBF
Nimewo Pati IRFSL4127PBF IRFSL4020PBF IRFSL3207 IRFSL4010PBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 72A (Tc) 18A (Tc) 180A (Tc) 180A (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Founisè Aparèy pake TO-262 TO-262 TO-262 TO-262
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Drenaj Sous Voltage (Vdss) 200 V 200 V 75 V 100 V
Rds Sou (Max) @ Id, Vgs 22mOhm @ 44A, 10V 105mOhm @ 11A, 10V 4.5mOhm @ 75A, 10V 4.7mOhm @ 106A, 10V
Vgs (th) (Max) @ Id 5V @ 250µA 4.9V @ 100µA 4V @ 250µA 4V @ 250µA
Pakèt Tube Tube Tube Tube
Dissipasyon pouvwa (Max) 375W (Tc) 100W (Tc) 330W (Tc) 375W (Tc)
Pake / Ka TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Nimewo pwodwi baz IRFSL4127 - - IRFSL4010
Seri HEXFET® - HEXFET® HEXFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 5380 pF @ 50 V 1200 pF @ 50 V 7600 pF @ 50 V 9575 pF @ 50 V
Pòtay Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 29 nC @ 10 V 260 nC @ 10 V 215 nC @ 10 V

IRFSL4127PBF fich PDF

Download IRFSL4127PBF PDF fich ak dokiman Infineon Technologies pou IRFSL4127PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf
PCN anbalaj
Mult Dev Label Chgs 18/Feb/2020.pdf
PCN obsolescence/ eol
Multiple Devices 25/Apr/2014.pdf PCN Retraction 19/May/2015.pdf
Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf

Shipment

Tan livrezon

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Sètifikasyon & Manm

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Infineon Technologies

IRFSL4127PBF

Infineon Technologies
32D-IRFSL4127PBF

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