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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFU3607PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFU3607PBF - Infineon Technologies

Manifakti Nimewo Pati
IRFU3607PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRFU3607PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 56A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
IRFU3607PBF.pdf
RoHs Status
Nan stok: 58260

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFU3607PBF Tech
Infineon Technologies - IRFU3607PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRFU3607PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake IPAK (TO-251AA)  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 9mOhm @ 46A, 10V  
Dissipasyon pouvwa (Max) 140W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3070 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 84 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 56A (Tc)  
Nimewo pwodwi baz IRFU3607  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRFU3607PBF.

Pwodwi atribi IRFU3607PBF IRFU3518-701PBF IRFU3707 IRFU3504Z
Nimewo Pati IRFU3607PBF IRFU3518-701PBF IRFU3707 IRFU3504Z
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vgs (th) (Max) @ Id 4V @ 100µA 4V @ 250µA 3V @ 250µA 4V @ 50µA
Dissipasyon pouvwa (Max) 140W (Tc) 110W (Tc) 87W (Tc) 90W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 56A (Tc) 38A (Tc) 61A (Tc) 42A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tube Tube Tube Tube
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 4.5V, 10V 10V
Kapasite Antre (Ciss) (Max) @ Vds 3070 pF @ 50 V 1710 pF @ 25 V 1990 pF @ 15 V 1510 pF @ 25 V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Nimewo pwodwi baz IRFU3607 - - -
Drenaj Sous Voltage (Vdss) 75 V 80 V 30 V 40 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 56 nC @ 10 V 19 nC @ 4.5 V 45 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 9mOhm @ 46A, 10V 29mOhm @ 18A, 10V 13mOhm @ 15A, 10V 9mOhm @ 42A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Vgs (Max) ±20V ±20V ±20V ±20V
Founisè Aparèy pake IPAK (TO-251AA) IPAK (TO-251AA) IPAK (TO-251AA) IPAK (TO-251AA)
FET Feature - - - -

IRFU3607PBF fich PDF

Download IRFU3607PBF PDF fich ak dokiman Infineon Technologies pou IRFU3607PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs 8/Sep/2021.pdf Mult Dev Label Chgs Aug/2020.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Tube Pkg MOQ Standardization 28/Jul/2017.pdf
PCN Lòt
Mult Dev Lot Code Standardization 11/Nov/2022.pdf
Asanble PCN/orijin
Mosfet Backend Wafer Processing 23/Oct/2013.pdf

Shipment

Tan livrezon

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Metòd livrezon

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    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

IRFU3607PBF

Infineon Technologies
32D-IRFU3607PBF

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