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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRL3705NSTRLPBF
IRL3705NSTRLPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRL3705NSTRLPBF - Infineon Technologies

Manifakti Nimewo Pati
IRL3705NSTRLPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRL3705NSTRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 55V 89A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRL3705NSTRLPBF.pdf
RoHs Status
Nan stok: 19346

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRL3705NSTRLPBF Tech
Infineon Technologies - IRL3705NSTRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRL3705NSTRLPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 10mOhm @ 46A, 10V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 170W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3600 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 55 V  
Kouran - Kontini Drain (Id) @ 25 ° C 89A (Tc)  
Nimewo pwodwi baz IRL3705  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRL3705NSTRLPBF.

Pwodwi atribi IRL3705NSTRLPBF IRL3705ZSPBF IRL3502SPBF IRL3705NLPBF
Nimewo Pati IRL3705NSTRLPBF IRL3705ZSPBF IRL3502SPBF IRL3705NLPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 3600 pF @ 25 V 2880 pF @ 25 V 4700 pF @ 15 V 3600 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4.5V, 10V 4.5V, 7V 4V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA
Founisè Aparèy pake D2PAK D2PAK D2PAK TO-262
Dissipasyon pouvwa (Max) 3.8W (Ta), 170W (Tc) 130W (Tc) 140W (Tc) 3.8W (Ta), 170W (Tc)
Rds Sou (Max) @ Id, Vgs 10mOhm @ 46A, 10V 8mOhm @ 52A, 10V 7mOhm @ 64A, 7V 10mOhm @ 46A, 10V
Drenaj Sous Voltage (Vdss) 55 V 55 V 20 V 55 V
Vgs (Max) ±16V ±16V ±10V ±16V
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 5 V 60 nC @ 5 V 110 nC @ 4.5 V 98 nC @ 5 V
Kouran - Kontini Drain (Id) @ 25 ° C 89A (Tc) 75A (Tc) 110A (Tc) 89A (Tc)
Pakèt Tape & Reel (TR) Tube Tube Tube
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (th) (Max) @ Id 2V @ 250µA 3V @ 250µA 700mV @ 250µA (Min) 2V @ 250µA
Nimewo pwodwi baz IRL3705 - - -

IRL3705NSTRLPBF fich PDF

Download IRL3705NSTRLPBF PDF fich ak dokiman Infineon Technologies pou IRL3705NSTRLPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN anbalaj
Mult Device Standard Label Chg 29/Sep/2017.pdf Barcode Label Update 24/Feb/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Label Chgs Aug/2020.pdf Mult Dev Lot Chgs 25/May/2021.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 18/Dec/2020.pdf

Shipment

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Sètifikasyon & Manm

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IRL3705NSTRLPBF Image

IRL3705NSTRLPBF

Infineon Technologies
32D-IRL3705NSTRLPBF

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