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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateIRS2001MTRPBF
IRS2001MTRPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRS2001MTRPBF - Infineon Technologies

Manifakti Nimewo Pati
IRS2001MTRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRS2001MTRPBF
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 16MLPQ
Deskripsyon detaye
Pake
16-VFQFN Exposed Pad
Done fèy
Cylindrical Battery Holders.pdf
RoHs Status
Nan stok: 29996

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRS2001MTRPBF Tech
Infineon Technologies - IRS2001MTRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRS2001MTRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Voltage - Pwovizyon pou 10V ~ 20V  
Founisè Aparèy pake 16-MLPQ (4x4)  
Seri -  
Leve / tonbe tan (tip) 70ns, 35ns  
Pake / Ka 16-VFQFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Operating Tanperati -40°C ~ 150°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH 0.8V, 2.5V  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 200 V  
Pòt tip IGBT, N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) 290mA, 600mA  
Chèn Kalite Independent  
Nimewo pwodwi baz IRS2001  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRS2001MTRPBF.

Pwodwi atribi IRS2001MTRPBF IRS2003SPBF IRS2003PBF IRS2001SPBF
Nimewo Pati IRS2001MTRPBF IRS2003SPBF IRS2003PBF IRS2001SPBF
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Kouran - Sòti Pik (Sous, Sink) 290mA, 600mA 290mA, 600mA 290mA, 600mA 290mA, 600mA
Segondè Side Voltage - Max (Bootstrap) 200 V 200 V 200 V 200 V
Voltage - Pwovizyon pou 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Founisè Aparèy pake 16-MLPQ (4x4) 8-SOIC 8-PDIP 8-SOIC
Pake / Ka 16-VFQFN Exposed Pad 8-SOIC (0.154', 3.90mm Width) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154', 3.90mm Width)
Chèn Kalite Independent Independent Independent Independent
Pòt tip IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Kantite chofè 2 2 2 2
Seri - - - -
Lojik Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Kalite Antre Non-Inverting Inverting, Non-Inverting Inverting, Non-Inverting Non-Inverting
Nimewo pwodwi baz IRS2001 IRS2003 IRS2003 IRS2001
Pakèt Tape & Reel (TR) Tube Tube Tube
Leve / tonbe tan (tip) 70ns, 35ns 70ns, 35ns 70ns, 35ns 70ns, 35ns
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount

IRS2001MTRPBF fich PDF

Download IRS2001MTRPBF PDF fich ak dokiman Infineon Technologies pou IRS2001MTRPBF - Infineon Technologies.

Lòt dokiman ki gen rapò
Part Number Guide.pdf
PCN konsepsyon/spesifikasyon
Cylindrical Battery Holders.pdf
Asanble PCN/orijin
2.73KHz.pdf
Fich
Cylindrical Battery Holders.pdf

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IRS2001MTRPBF

Infineon Technologies
32D-IRS2001MTRPBF

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