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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateDGD2003S8-13
DGD2003S8-13 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

DGD2003S8-13 - Diodes Incorporated

Manifakti Nimewo Pati
DGD2003S8-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DGD2003S8-13
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SO
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
DGD2003, DGD2005 & DGD2012 New Prod. Annc.pdf
DGD2003 Datasheet.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 111910

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon DGD2003S8-13 Tech
Diodes Incorporated - DGD2003S8-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DGD2003S8-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Voltage - Pwovizyon pou 10V ~ 20V  
Founisè Aparèy pake 8-SO Type TH  
Seri -  
Leve / tonbe tan (tip) 70ns, 35ns  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Operating Tanperati -40°C ~ 125°C (TA)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH 0.8V, 2.5V  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 200 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) 290mA, 600mA  
Chèn Kalite Synchronous  
Nimewo pwodwi baz DGD2003  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 3 (168 Hours)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DGD2003S8-13.

Pwodwi atribi DGD2003S8-13 DGD1503S8-13 DGD0547FN-7 DGD0506AM10-13
Nimewo Pati DGD2003S8-13 DGD1503S8-13 DGD0547FN-7 DGD0506AM10-13
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Kouran - Sòti Pik (Sous, Sink) 290mA, 600mA 290mA, 600mA 1.5A, 2A 1.5A, 2A
Voltage - Pwovizyon pou 10V ~ 20V 10V ~ 20V 0.3V ~ 60V 8V ~ 14V
Nimewo pwodwi baz DGD2003 DGD1503 DGD0547 DGD0506
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Operating Tanperati -40°C ~ 125°C (TA) -40°C ~ 150°C (TJ) -40°C ~ 125°C (TA) -40°C ~ 150°C (TJ)
Lojik Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.4V 0.8V, 2.4V
Segondè Side Voltage - Max (Bootstrap) 200 V 250 V 50 V 50 V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154', 3.90mm Width) 10-WFDFN Exposed Pad 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Kantite chofè 2 2 2 2
Chèn Kalite Synchronous Independent Synchronous Synchronous
Kalite Antre Non-Inverting Inverting, Non-Inverting CMOS/TTL Non-Inverting
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - - - -
Founisè Aparèy pake 8-SO Type TH 8-SO W-DFN3030-10 10-MSOP
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Leve / tonbe tan (tip) 70ns, 35ns 70ns, 35ns 16ns, 12ns 17ns, 12ns

DGD2003S8-13 fich PDF

Download DGD2003S8-13 PDF fich ak dokiman Diodes Incorporated pou DGD2003S8-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
Asanble PCN/orijin
Assembly Site 01/Dec/2022.pdf
Fich
DGD2003, DGD2005 & DGD2012 New Prod. Annc.pdf DGD2003 Datasheet.pdf

Shipment

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DGD2003S8-13 Image

DGD2003S8-13

Diodes Incorporated
32D-DGD2003S8-13

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