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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFCP150N65F
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FCP150N65F - Fairchild Semiconductor

Manifakti Nimewo Pati
FCP150N65F
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FCP150N65F
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR, N
Deskripsyon detaye
Pake
TO-220-3
Done fèy
FCP150N65F.pdf
Nan stok: 5110

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon FCP150N65F Tech
Fairchild Semiconductor - FCP150N65F espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FCP150N65F

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 5V @ 2.4mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri HiPerFET™, Polar™  
Rds Sou (Max) @ Id, Vgs 150mOhm @ 12A, 10V  
Dissipasyon pouvwa (Max) 298W (Tc)  
Pake / Ka TO-220-3  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3737 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 93 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 24A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FCP150N65F.

Pwodwi atribi FCP150N65F FCP165N60E FCP165N65S3R0 FCP16N60
Nimewo Pati FCP150N65F FCP165N60E FCP165N65S3R0 FCP16N60
Manifakti Fairchild Semiconductor onsemi onsemi onsemi
Kouran - Kontini Drain (Id) @ 25 ° C 24A (Tc) 23A (Tc) 19A (Tc) 16A (Tc)
Seri HiPerFET™, Polar™ SuperFET® II SuperFET® III SuperFET™
Dissipasyon pouvwa (Max) 298W (Tc) 227W (Tc) 154W (Tc) 167W (Tc)
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220-3
Drenaj Sous Voltage (Vdss) 650 V 600 V 650 V 600 V
Rds Sou (Max) @ Id, Vgs 150mOhm @ 12A, 10V 165mOhm @ 11.5A, 10V 165mOhm @ 9.5A, 10V 260mOhm @ 8A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kapasite Antre (Ciss) (Max) @ Vds 3737 pF @ 100 V 2434 pF @ 380 V 1500 pF @ 400 V 2250 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 75 nC @ 10 V 39 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V
Vgs (th) (Max) @ Id 5V @ 2.4mA 3.5V @ 250µA 4.5V @ 1.9mA 5V @ 250µA
Pakèt Bulk Tube Tube Tube
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

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Sètifikasyon & Manm

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Fairchild Semiconductor

FCP150N65F

Fairchild Semiconductor
32D-FCP150N65F

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