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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateIXDN604SIA
IXDN604SIA Image
Imaj ka reprezantasyon.
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EKSPRIME OPSYON
Metòd Peman

IXDN604SIA - IXYS Integrated Circuits Division

Manifakti Nimewo Pati
IXDN604SIA
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXDN604SIA
ECAD modèl
Pati Deskripsyon
IC GATE DRVR LOW-SIDE 8SOIC
Pake
8-SOIC (0.154', 3.90mm Width)
Done fèy
Cylindrical Battery Holders.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 41810

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IXDN604SIA Tech
IXYS Integrated Circuits Division - IXDN604SIA espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS Integrated Circuits Division - IXDN604SIA

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Voltage - Pwovizyon pou 4.5V ~ 35V  
Founisè Aparèy pake 8-SOIC  
Seri -  
Leve / tonbe tan (tip) 9ns, 8ns  
Pake / Ka 8-SOIC (0.154', 3.90mm Width)  
Pakèt Tube  
Operating Tanperati -40°C ~ 125°C (TA)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH 0.8V, 3V  
Kalite Antre Non-Inverting  
Pòt tip IGBT, N-Channel, P-Channel MOSFET  
Kondwi konte genyen Low-Side  
Kouran - Sòti Pik (Sous, Sink) 4A, 4A  
Chèn Kalite Independent  
Nimewo pwodwi baz IXDN604  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS Integrated Circuits Division IXDN604SIA.

Pwodwi atribi IXDN604SIA IXDN602PI IXDN602SITR IXDN602SIA
Nimewo Pati IXDN604SIA IXDN602PI IXDN602SITR IXDN602SIA
Manifakti IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division
Leve / tonbe tan (tip) 9ns, 8ns 7.5ns, 6.5ns 7.5ns, 6.5ns 7.5ns, 6.5ns
Pake / Ka 8-SOIC (0.154', 3.90mm Width) 8-DIP (0.300', 7.62mm) 8-SOIC (0.154', 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width)
Chèn Kalite Independent Independent Independent Independent
Pòt tip IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Lojik Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V
Operating Tanperati -40°C ~ 125°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kantite chofè 2 2 2 2
Founisè Aparèy pake 8-SOIC 8-DIP 8-SOIC-EP 8-SOIC
Kondwi konte genyen Low-Side Low-Side Low-Side Low-Side
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Seri - - - -
Voltage - Pwovizyon pou 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pakèt Tube Tube Tape & Reel (TR) Tube
Kouran - Sòti Pik (Sous, Sink) 4A, 4A 2A, 2A 2A, 2A 2A, 2A
Nimewo pwodwi baz IXDN604 IXDN602 IXDN602 IXDN602

IXDN604SIA fich PDF

Download IXDN604SIA PDF fich ak dokiman IXYS Integrated Circuits Division pou IXDN604SIA - IXYS Integrated Circuits Division.

Fich
Cylindrical Battery Holders.pdf

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IXDN604SIA Image

IXDN604SIA

IXYS Integrated Circuits Division
32D-IXDN604SIA

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