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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFP12N65X2M
IXFP12N65X2M Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFP12N65X2M - IXYS

Manifakti Nimewo Pati
IXFP12N65X2M
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFP12N65X2M
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 12A TO220
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
IXFP12N65X2M Datasheet.pdf
RoHs Status
Nan stok: 23234

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Espesifikasyon

Espesifikasyon IXFP12N65X2M Tech
IXYS - IXFP12N65X2M espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFP12N65X2M

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220 Isolated Tab  
Seri HiPerFET™, Ultra X2  
Rds Sou (Max) @ Id, Vgs 310mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 40W (Tc)  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1134 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc)  
Nimewo pwodwi baz IXFP12  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFP12N65X2M.

Pwodwi atribi IXFP12N65X2M IXFP14N60P IXFP180N10T2 IXFP10N60P
Nimewo Pati IXFP12N65X2M IXFP14N60P IXFP180N10T2 IXFP10N60P
Manifakti IXYS IXYS IXYS IXYS
Fèt tip N-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake TO-220 Isolated Tab TO-220-3 TO-220-3 TO-220-3
Kapasite Antre (Ciss) (Max) @ Vds 1134 pF @ 25 V 2500 pF @ 25 V 10500 pF @ 25 V 1610 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 18.5 nC @ 10 V 36 nC @ 10 V 185 nC @ 10 V 32 nC @ 10 V
Dissipasyon pouvwa (Max) 40W (Tc) 300W (Tc) 480W (Tc) 200W (Tc)
Rds Sou (Max) @ Id, Vgs 310mOhm @ 6A, 10V 550mOhm @ 7A, 10V 6mOhm @ 50A, 10V 740mOhm @ 5A, 10V
Pakèt Tube Tube Tube Tube
Vgs (Max) ±30V ±30V ±20V ±30V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc) 14A (Tc) 180A (Tc) 10A (Tc)
FET Feature - - - -
Seri HiPerFET™, Ultra X2 HiPerFET™, Polar HiPerFET™, TrenchT2™ HiPerFET™, Polar
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 650 V 600 V 100 V 600 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3 TO-220-3
Vgs (th) (Max) @ Id 5V @ 250µA 5.5V @ 2.5mA 4V @ 250µA 5.5V @ 1mA
Nimewo pwodwi baz IXFP12 IXFP14 IXFP180 IXFP10
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

IXFP12N65X2M fich PDF

Download IXFP12N65X2M PDF fich ak dokiman IXYS pou IXFP12N65X2M - IXYS.

PCN konsepsyon/spesifikasyon
Multiple Devices Molding Compound 07/Sep/2020.pdf
Fich
IXFP12N65X2M Datasheet.pdf

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Sètifikasyon & Manm

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IXFP12N65X2M Image

IXFP12N65X2M

IXYS
32D-IXFP12N65X2M

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