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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - IGBTs - ModilIXXN110N65B4H1
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXXN110N65B4H1 - IXYS

Manifakti Nimewo Pati
IXXN110N65B4H1
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXXN110N65B4H1
ECAD modèl
Pati Deskripsyon
IGBT MOD 650V 215A 750W SOT227B
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
IXXN110N65B4H1.pdf
RoHs Status
Nan stok: 1560

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IXXN110N65B4H1 Tech
IXYS - IXXN110N65B4H1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXXN110N65B4H1

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Voltage - Pèseptè Emitter pann (Max) 650 V  
Vce (sou) (Max) @ Vge, Ic 2.1V @ 15V, 110A  
Founisè Aparèy pake SOT-227B  
Seri XPT™, GenX4™  
Pouvwa - Max 750 W  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Operating Tanperati -55°C ~ 175°C (TJ)  
Pwodwi atribi Valè atribi  
NTC Thermistor No  
Mounting Kalite Chassis Mount  
Kapasite Antre (Cies) @ Vce 3.65 nF @ 25 V  
Antre Standard  
IGBT Kalite PT  
Kouran - Koupe Cutè (Max) 50 µA  
Kouran - Pèseptè (Ic) (Max) 215 A  
Konfigirasyon Single  
Nimewo pwodwi baz IXXN110  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXXN110N65B4H1.

Pwodwi atribi IXXN110N65B4H1 IXXN200N60B3H1 IXXN110N65C4H1 CM1400DUC-24NF
Nimewo Pati IXXN110N65B4H1 IXXN200N60B3H1 IXXN110N65C4H1 CM1400DUC-24NF
Manifakti IXYS IXYS IXYS Powerex Inc.
Vce (sou) (Max) @ Vge, Ic 2.1V @ 15V, 110A 1.7V @ 15V, 100A 2.35V @ 15V, 110A 2.5V @ 15V, 1400A
Mounting Kalite Chassis Mount Chassis Mount Chassis Mount -
Antre Standard Standard Standard Standard
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -40°C ~ 150°C (TJ)
Kouran - Pèseptè (Ic) (Max) 215 A 200 A 210 A 1400 A
Pakèt Tube Tube Tube Bulk
Pouvwa - Max 750 W 780 W 750 W 8900 W
NTC Thermistor No No No No
IGBT Kalite PT PT PT -
Voltage - Pèseptè Emitter pann (Max) 650 V 600 V 650 V 1200 V
Seri XPT™, GenX4™ XPT™, GenX3™ XPT™, GenX4™ IGBTMOD™
Kapasite Antre (Cies) @ Vce 3.65 nF @ 25 V 9.97 nF @ 25 V 3.69 nF @ 25 V 220 nF @ 10 V
Kouran - Koupe Cutè (Max) 50 µA 50 µA 50 µA 1 mA
Pake / Ka SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC Module
Nimewo pwodwi baz IXXN110 IXXN200 IXXN110 -
Founisè Aparèy pake SOT-227B SOT-227B SOT-227B Module
Konfigirasyon Single Single Single Half Bridge

IXXN110N65B4H1 fich PDF

Download IXXN110N65B4H1 PDF fich ak dokiman IXYS pou IXXN110N65B4H1 - IXYS.

Fich
IXXN110N65B4H1.pdf

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Sètifikasyon & Manm

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IXYS

IXXN110N65B4H1

IXYS
32D-IXXN110N65B4H1

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