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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolar (BJT) - Single, Pre-BazeDTDG23YPT100
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

DTDG23YPT100 - Rohm Semiconductor

Manifakti Nimewo Pati
DTDG23YPT100
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-DTDG23YPT100
ECAD modèl
Pati Deskripsyon
TRANS PREBIAS NPN 1.5W MPT3
Deskripsyon detaye
Pake
TO-243AA
Done fèy
MPT3 T100 Taping Spec.pdf
RoHs Status
Nan stok: 76700

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon DTDG23YPT100 Tech
Rohm Semiconductor - DTDG23YPT100 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - DTDG23YPT100

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Pèseptè Emitter pann (Max) 60 V  
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA  
Transistor Tip NPN - Pre-Biased  
Founisè Aparèy pake MPT3  
Seri -  
Rezistans - Emitter Sèvi (R2) 22 kOhms  
Rezistans - Sèvi (R1) 2.2 kOhms  
Pouvwa - Max 1.5 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-243AA  
Pakèt Tape & Reel (TR)  
Mounting Kalite Surface Mount  
Frekans - Tranzisyon 80 MHz  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 300 @ 500mA, 2V  
Kouran - Koupe Cutè (Max) 500nA  
Kouran - Pèseptè (Ic) (Max) 1 A  
Nimewo pwodwi baz DTDG23  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor DTDG23YPT100.

Pwodwi atribi DTDG23YPT100 DTDG14GPT100 DTDG14GP T100 DTDS14GPFRAT100
Nimewo Pati DTDG23YPT100 DTDG14GPT100 DTDG14GP T100 DTDS14GPFRAT100
Manifakti Rohm Semiconductor Rohm Semiconductor LAPIS Technology LAPIS Technology
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA 400mV @ 5mA, 500mA - -
Mounting Kalite Surface Mount Surface Mount - -
Seri - - - -
Voltage - Pèseptè Emitter pann (Max) 60 V 60 V - -
DC aktyèl DC (HFE) (Min) @ Ic, Vce 300 @ 500mA, 2V 300 @ 500mA, 2V - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Rezistans - Emitter Sèvi (R2) 22 kOhms 10 kOhms - -
Founisè Aparèy pake MPT3 MPT3 - -
Pake / Ka TO-243AA TO-243AA - -
Rezistans - Sèvi (R1) 2.2 kOhms - - -
Kouran - Pèseptè (Ic) (Max) 1 A 1 A - -
Transistor Tip NPN - Pre-Biased NPN - Pre-Biased - -
Frekans - Tranzisyon 80 MHz 80 MHz - -
Kouran - Koupe Cutè (Max) 500nA 500nA (ICBO) - -
Nimewo pwodwi baz DTDG23 DTDG14 - -
Pouvwa - Max 1.5 W 2 W - -

DTDG23YPT100 fich PDF

Download DTDG23YPT100 PDF fich ak dokiman Rohm Semiconductor pou DTDG23YPT100 - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf MPT3 Part Marking.pdf MPT3 Inner Structure.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf MPT3 Constitution Material List.pdf
PCN konsepsyon/spesifikasyon
Mult Devices Marking 16/Apr/2018.pdf
Fich
MPT3 T100 Taping Spec.pdf

Shipment

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Sètifikasyon & Manm

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Rohm Semiconductor

DTDG23YPT100

Rohm Semiconductor
32D-DTDG23YPT100

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