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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleR6012ANJTL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

R6012ANJTL - Rohm Semiconductor

Manifakti Nimewo Pati
R6012ANJTL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-R6012ANJTL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 12A LPTS
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
R6012ANJTL.pdf
RoHs Status
Nan stok: 16956

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon R6012ANJTL Tech
Rohm Semiconductor - R6012ANJTL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - R6012ANJTL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 4.5V @ 1mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake LPTS  
Seri -  
Rds Sou (Max) @ Id, Vgs 420mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 100W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta)  
Nimewo pwodwi baz R6012  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor R6012ANJTL.

Pwodwi atribi R6012ANJTL R6011END3TL1 R6015ANX R6012JNXC7G
Nimewo Pati R6012ANJTL R6011END3TL1 R6015ANX R6012JNXC7G
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta) 11A (Tc) 15A (Ta) 12A (Tc)
Rds Sou (Max) @ Id, Vgs 420mOhm @ 6A, 10V 390mOhm @ 3.8A, 10V 300mOhm @ 7.5A, 10V 390mOhm @ 6A, 15V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 15V
Kapasite Antre (Ciss) (Max) @ Vds 1300 pF @ 25 V 670 pF @ 25 V 1700 pF @ 25 V 900 pF @ 100 V
Nimewo pwodwi baz R6012 R6011 R6015 R6012
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tube
Vgs (th) (Max) @ Id 4.5V @ 1mA 4V @ 1mA 4.5V @ 1mA 7V @ 2.5mA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 Full Pack TO-220-3 Full Pack
Vgs (Max) ±30V ±20V ±30V ±30V
Founisè Aparèy pake LPTS TO-252 TO-220FM TO-220FM
Seri - - - -
Dissipasyon pouvwa (Max) 100W (Tc) 124W (Tc) 50W (Tc) 60W (Tc)
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 32 nC @ 10 V 50 nC @ 10 V 28 nC @ 15 V
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 600 V
Mounting Kalite Surface Mount Surface Mount Through Hole Through Hole

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Sètifikasyon & Manm

Wè plis
Rohm Semiconductor

R6012ANJTL

Rohm Semiconductor
32D-R6012ANJTL

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