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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRV1C002UNT2CL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RV1C002UNT2CL - Rohm Semiconductor

Manifakti Nimewo Pati
RV1C002UNT2CL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RV1C002UNT2CL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 150MA VML0806
Deskripsyon detaye
Pake
3-SMD, No Lead
Done fèy
RV1C002UNT2CL.pdf
RoHs Status
Nan stok: 436900

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RV1C002UNT2CL Tech
Rohm Semiconductor - RV1C002UNT2CL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RV1C002UNT2CL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 1V @ 100µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake VML0806  
Seri -  
Rds Sou (Max) @ Id, Vgs 2Ohm @ 150mA, 4.5V  
Dissipasyon pouvwa (Max) 100mW (Ta)  
Pake / Ka 3-SMD, No Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 12 pF @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 150mA (Ta)  
Nimewo pwodwi baz RV1C002  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RV1C002UNT2CL.

Pwodwi atribi RV1C002UNT2CL RV1C001ZPT2L RV16YN15SB103 RV1C002UN T2CL
Nimewo Pati RV1C002UNT2CL RV1C001ZPT2L RV16YN15SB103 RV1C002UN T2CL
Manifakti Rohm Semiconductor Rohm Semiconductor TOCOS LAPIS Technology
Vgs (Max) ±8V ±10V - -
Drenaj Sous Voltage (Vdss) 20 V 20 V - -
Mounting Kalite Surface Mount Surface Mount - -
Kapasite Antre (Ciss) (Max) @ Vds 12 pF @ 10 V 15 pF @ 10 V - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 4.5V 1.2V, 4.5V - -
Seri - - - -
Rds Sou (Max) @ Id, Vgs 2Ohm @ 150mA, 4.5V 3.8Ohm @ 100mA, 4.5V - -
Vgs (th) (Max) @ Id 1V @ 100µA 1V @ 100µA - -
Founisè Aparèy pake VML0806 VML0806 - -
FET Feature - - - -
Pake / Ka 3-SMD, No Lead 3-SMD, No Lead - -
Fèt tip N-Channel P-Channel - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Nimewo pwodwi baz RV1C002 RV1C001 - -
Dissipasyon pouvwa (Max) 100mW (Ta) 100mW (Ta) - -
Operating Tanperati 150°C (TJ) 150°C (TJ) - -
Kouran - Kontini Drain (Id) @ 25 ° C 150mA (Ta) 100mA (Ta) - -

RV1C002UNT2CL fich PDF

Download RV1C002UNT2CL PDF fich ak dokiman Rohm Semiconductor pou RV1C002UNT2CL - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

Shipment

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Sètifikasyon & Manm

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Rohm Semiconductor

RV1C002UNT2CL

Rohm Semiconductor
32D-RV1C002UNT2CL

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