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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleCSD18502Q5B
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD18502Q5B - Texas Instruments

Manifakti Nimewo Pati
CSD18502Q5B
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD18502Q5B
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 26A/100A 8VSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
CSD18502Q5B.pdf
RoHs Status
Nan stok: 28890

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon CSD18502Q5B Tech
Texas Instruments - CSD18502Q5B espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD18502Q5B

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 2.2V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-VSON-CLIP (5x6)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 3.2W (Ta), 156W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5070 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 68 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 26A (Ta), 100A (Tc)  
Nimewo pwodwi baz CSD18502  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD18502Q5B.

Pwodwi atribi CSD18502Q5B CSD18503Q5A CSD18501Q5A CSD18502KCS
Nimewo Pati CSD18502Q5B CSD18503Q5A CSD18501Q5A CSD18502KCS
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Rds Sou (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V 4.3mOhm @ 22A, 10V 3.2mOhm @ 25A, 10V 2.9mOhm @ 100A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Vgs (th) (Max) @ Id 2.2V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.1V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V
Kouran - Kontini Drain (Id) @ 25 ° C 26A (Ta), 100A (Tc) 19A (Ta), 100A (Tc) 22A (Ta), 100A (Tc) 100A (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 32 nC @ 10 V 50 nC @ 10 V 62 nC @ 10 V
Nimewo pwodwi baz CSD18502 CSD18503 CSD18501 CSD18502
Seri NexFET™ NexFET™ NexFET™ NexFET™
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Founisè Aparèy pake 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) TO-220-3
Kapasite Antre (Ciss) (Max) @ Vds 5070 pF @ 20 V 2640 pF @ 20 V 3840 pF @ 20 V 4680 pF @ 20 V
Dissipasyon pouvwa (Max) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 150W (Tc) 259W (Tc)
FET Feature - - - -
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN TO-220-3
Fèt tip N-Channel N-Channel N-Channel N-Channel

CSD18502Q5B fich PDF

Download CSD18502Q5B PDF fich ak dokiman Texas Instruments pou CSD18502Q5B - Texas Instruments.

PCN konsepsyon/spesifikasyon
Qualification Revision A 01/Jul/2014.pdf
Asanble PCN/orijin
Qualification Wire Bond 27/May/2014.pdf

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Sètifikasyon & Manm

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Texas Instruments

CSD18502Q5B

Texas Instruments
32D-CSD18502Q5B

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