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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleCSD18543Q3AT
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

CSD18543Q3AT - Texas Instruments

Manifakti Nimewo Pati
CSD18543Q3AT
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD18543Q3AT
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 12A/60A 8VSON
Pake
8-PowerVDFN
Done fèy
CSD18543Q3AT.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 39530

Jaden obligatwa yo endike pa yon asterisk (*)
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EKSPRIME OPSYON
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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon CSD18543Q3AT Tech
Texas Instruments - CSD18543Q3AT espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD18543Q3AT

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 2.7V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-VSONP (3x3.15)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 15.6mOhm @ 12A, 4.5V  
Dissipasyon pouvwa (Max) 66W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1150 pF @ 30 V  
Pòtay Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature Standard  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta), 60A (Tc)  
Nimewo pwodwi baz CSD18543  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD18543Q3AT.

Pwodwi atribi CSD18543Q3AT CSD19501KCS CSD18541F5T CSD18542KTT
Nimewo Pati CSD18543Q3AT CSD19501KCS CSD18541F5T CSD18542KTT
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Seri NexFET™ NexFET™ FemtoFET™ NexFET™
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Ta), 60A (Tc) 100A (Ta) 2.2A (Ta) 200A (Ta)
Rds Sou (Max) @ Id, Vgs 15.6mOhm @ 12A, 4.5V 6.6mOhm @ 60A, 10V 65mOhm @ 1A, 10V 4mOhm @ 100A, 10V
Drenaj Sous Voltage (Vdss) 60 V 80 V 60 V 60 V
Nimewo pwodwi baz CSD18543 CSD19501 CSD18541 CSD18542
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V
FET Feature Standard - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 66W (Tc) 217W (Tc) 500mW (Ta) 250W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka 8-PowerVDFN TO-220-3 3-SMD, No Lead TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 2.7V @ 250µA 3.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 1150 pF @ 30 V 3980 pF @ 40 V 777 pF @ 30 V 5070 pF @ 30 V
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V 50 nC @ 10 V 14 nC @ 10 V 57 nC @ 10 V
Founisè Aparèy pake 8-VSONP (3x3.15) TO-220-3 3-PICOSTAR DDPAK/TO-263-3

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Sètifikasyon & Manm

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Texas Instruments

CSD18543Q3AT

Texas Instruments
32D-CSD18543Q3AT

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