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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleCSD19531Q5AT
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD19531Q5AT - Texas Instruments

Manifakti Nimewo Pati
CSD19531Q5AT
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD19531Q5AT
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 100A 8VSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
CSD19531Q5AT.pdf
RoHs Status
Nan stok: 28810

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Espesifikasyon

Espesifikasyon CSD19531Q5AT Tech
Texas Instruments - CSD19531Q5AT espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD19531Q5AT

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 3.3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-VSONP (5x6)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 6.4mOhm @ 16A, 10V  
Dissipasyon pouvwa (Max) 3.3W (Ta), 125W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3870 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta)  
Nimewo pwodwi baz CSD19531  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD19531Q5AT.

Pwodwi atribi CSD19531Q5AT CSD19532KTT CSD19534KCS CSD19531Q5A
Nimewo Pati CSD19531Q5AT CSD19532KTT CSD19534KCS CSD19531Q5A
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 57 nC @ 10 V 22.2 nC @ 10 V 48 nC @ 10 V
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 6.4mOhm @ 16A, 10V 5.6mOhm @ 90A, 10V 16.5mOhm @ 30A, 10V 6.4mOhm @ 16A, 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka 8-PowerTDFN TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-220-3 8-PowerTDFN
Kapasite Antre (Ciss) (Max) @ Vds 3870 pF @ 50 V 5060 pF @ 50 V 1670 pF @ 50 V 3870 pF @ 50 V
Seri NexFET™ NexFET™ - NexFET™
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 3.3W (Ta), 125W (Tc) 250W (Tc) 118W (Tc) 3.3W (Ta), 125W (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Nimewo pwodwi baz CSD19531 CSD19532 CSD19534 CSD19531
Vgs (th) (Max) @ Id 3.3V @ 250µA 3.2V @ 250µA 3.4V @ 250µA 3.3V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta) 200A (Ta) 100A (Ta) 100A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tape & Reel (TR)
Founisè Aparèy pake 8-VSONP (5x6) DDPAK/TO-263-3 TO-220-3 8-VSONP (5x6)
Mounting Kalite Surface Mount Surface Mount Through Hole Surface Mount

Shipment

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  1. Telefòn
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Sètifikasyon & Manm

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Texas Instruments

CSD19531Q5AT

Texas Instruments
32D-CSD19531Q5AT

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