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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleCSD25401Q3
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD25401Q3 - Texas Instruments

Manifakti Nimewo Pati
CSD25401Q3
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD25401Q3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 14A/60A 8VSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
CSD25401Q3.pdf
RoHs Status
Nan stok: 4690

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon CSD25401Q3 Tech
Texas Instruments - CSD25401Q3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD25401Q3

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 1.2V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-VSON-CLIP (3.3x3.3)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 11.7mOhm @ 10A, 4.5V  
Dissipasyon pouvwa (Max) 2.8W (Ta)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1400 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 12.3 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Ta), 60A (Tc)  
Nimewo pwodwi baz CSD2540  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD25401Q3.

Pwodwi atribi CSD25401Q3 CSD25481F4T CSD25483F4 CSD25404Q3
Nimewo Pati CSD25401Q3 CSD25481F4T CSD25483F4 CSD25404Q3
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Ta), 60A (Tc) 2.5A (Ta) 1.6A (Ta) 104A (Tc)
Founisè Aparèy pake 8-VSON-CLIP (3.3x3.3) 3-PICOSTAR 3-PICOSTAR 8-VSONP (3x3.15)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 11.7mOhm @ 10A, 4.5V 88mOhm @ 500mA, 8V 205mOhm @ 500mA, 8V 6.5mOhm @ 10A, 4.5V
Kapasite Antre (Ciss) (Max) @ Vds 1400 pF @ 10 V 189 pF @ 10 V 198 pF @ 10 V 2120 pF @ 10 V
Dissipasyon pouvwa (Max) 2.8W (Ta) 500mW (Ta) 500mW (Ta) 2.8W (Ta), 96W (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±12V -12V -12V ±12V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 8-PowerTDFN 3-XFDFN 3-XFDFN 8-PowerVDFN
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 12.3 nC @ 4.5 V 0.91 nC @ 4.5 V 0.959 nC @ 4.5 V 14.1 nC @ 4.5 V
Nimewo pwodwi baz CSD2540 CSD25481 CSD25483 CSD25404
Fèt tip P-Channel P-Channel P-Channel P-Channel
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 20 V
Seri NexFET™ FemtoFET™ NexFET™ NexFET™
Vgs (th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.15V @ 250µA
FET Feature - - - -

CSD25401Q3 fich PDF

Download CSD25401Q3 PDF fich ak dokiman Texas Instruments pou CSD25401Q3 - Texas Instruments.

Asanble PCN/orijin
Assembly/Test Site Revision C 09/Feb/2015.pdf
PCN obsolescence/ eol
Multiple Devices 20/Feb/2014.pdf

Shipment

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Sètifikasyon & Manm

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Texas Instruments

CSD25401Q3

Texas Instruments
32D-CSD25401Q3

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