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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayCSD86350Q5D
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD86350Q5D - Texas Instruments

Manifakti Nimewo Pati
CSD86350Q5D
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD86350Q5D
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 25V 40A 8SON
Deskripsyon detaye
Pake
8-PowerLDFN
Done fèy
CSD86350Q5D.pdf
RoHs Status
Nan stok: 25707

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Kantite

Espesifikasyon

Espesifikasyon CSD86350Q5D Tech
Texas Instruments - CSD86350Q5D espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD86350Q5D

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 2.1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-LSON (5x6)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 6mOhm @ 20A, 8V  
Pouvwa - Max 13W  
Pake / Ka 8-PowerLDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1870pF @ 12.5V  
Pòtay Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 25V  
Kouran - Kontini Drain (Id) @ 25 ° C 40A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz CSD86350Q5  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD86350Q5D.

Pwodwi atribi CSD86350Q5D CSD86330Q3D CSD85312Q3E CSD83325L
Nimewo Pati CSD86350Q5D CSD86330Q3D CSD85312Q3E CSD83325L
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Pòtay Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V 6.2nC @ 4.5V 15.2nC @ 4.5V 10.9nC @ 4.5V
Konfigirasyon 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) 2 N-Channel (Dual) Common Source 2 N-Channel (Dual) Common Drain
Rds Sou (Max) @ Id, Vgs 6mOhm @ 20A, 8V 9.6mOhm @ 14A, 8V 12.4mOhm @ 10A, 8V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate, 5V Drive -
Pake / Ka 8-PowerLDFN 8-PowerLDFN 8-PowerVDFN 6-XFBGA
Pouvwa - Max 13W 6W 2.5W 2.3W
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri NexFET™ NexFET™ NexFET™ NexFET™
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 1.4V @ 250µA 1.25V @ 250µA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake 8-LSON (5x6) 8-LSON (3.3x3.3) 8-VSON (3.3x3.3) 6-PicoStar
Nimewo pwodwi baz CSD86350Q5 CSD86330Q3 CSD85312 CSD83325
Drenaj Sous Voltage (Vdss) 25V 25V 20V 12V
Kapasite Antre (Ciss) (Max) @ Vds 1870pF @ 12.5V 920pF @ 12.5V 2390pF @ 10V -
Kouran - Kontini Drain (Id) @ 25 ° C 40A 20A 39A -

CSD86350Q5D fich PDF

Download CSD86350Q5D PDF fich ak dokiman Texas Instruments pou CSD86350Q5D - Texas Instruments.

PCN konsepsyon/spesifikasyon
Qualification Revision A 01/Jul/2014.pdf
Asanble PCN/orijin
Qualification Wire Bond 27/May/2014.pdf
PCN anbalaj
MSL1 Bubble Bag Conversion 24/Sep/2013.pdf
Html fich
CSD86350Q5D.pdf

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Sètifikasyon & Manm

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Texas Instruments

CSD86350Q5D

Texas Instruments
32D-CSD86350Q5D

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