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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayCSD87313DMS
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD87313DMS - Texas Instruments

Manifakti Nimewo Pati
CSD87313DMS
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD87313DMS
ECAD modèl
Pati Deskripsyon
MOSFET 2 N-CHANNEL 30V 8WSON
Deskripsyon detaye
Pake
8-PowerWDFN
Done fèy
CSD87313DMS.pdf
RoHs Status
Nan stok: 52140

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Espesifikasyon

Espesifikasyon CSD87313DMS Tech
Texas Instruments - CSD87313DMS espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD87313DMS

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 1.25V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-WSON (3.3x3.3)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs -  
Pake / Ka 8-PowerWDFN  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C (TJ)  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4290pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 4.5V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C -  
Konfigirasyon 2 N-Channel (Dual) Common Drain  
Nimewo pwodwi baz CSD87313  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD87313DMS.

Pwodwi atribi CSD87313DMS CSD87335Q3D CSD85312Q3E CSD86360Q5D
Nimewo Pati CSD87313DMS CSD87335Q3D CSD85312Q3E CSD86360Q5D
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C - - 39A 50A
Nimewo pwodwi baz CSD87313 CSD87335Q3 CSD85312 CSD86360Q5
Vgs (th) (Max) @ Id 1.25V @ 250µA 1.9V @ 250µA 1.4V @ 250µA 2.1V @ 250µA
Rds Sou (Max) @ Id, Vgs - - 12.4mOhm @ 10A, 8V -
FET Feature - - Logic Level Gate, 5V Drive Logic Level Gate
Kapasite Antre (Ciss) (Max) @ Vds 4290pF @ 15V 1050pF @ 15V 2390pF @ 10V 2060pF @ 12.5
Konfigirasyon 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Common Source 2 N-Channel (Half Bridge)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Seri NexFET™ NexFET™ NexFET™ NexFET™
Drenaj Sous Voltage (Vdss) 30V 30V 20V 25V
Founisè Aparèy pake 8-WSON (3.3x3.3) 8-LSON (3.3x3.3) 8-VSON (3.3x3.3) 8-LSON (5x6)
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 4.5V 7.4nC @ 4.5V 15.2nC @ 4.5V 12.6nC @ 4.5V
Pake / Ka 8-PowerWDFN 8-PowerLDFN 8-PowerVDFN 8-PowerLDFN

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Sètifikasyon & Manm

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Texas Instruments

CSD87313DMS

Texas Instruments
32D-CSD87313DMS

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