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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAPT100F50J
APT100F50J Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APT100F50J - Microchip Technology

Manifakti Nimewo Pati
APT100F50J
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-APT100F50J
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 103A ISOTOP
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
APT100F50J.pdf
RoHs Status
Nan stok: 636

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Kantite

Espesifikasyon

Espesifikasyon APT100F50J Tech
Microchip Technology - APT100F50J espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - APT100F50J

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 5V @ 5mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ISOTOP®  
Seri POWER MOS 8™  
Rds Sou (Max) @ Id, Vgs 36mOhm @ 75A, 10V  
Dissipasyon pouvwa (Max) 960W (Tc)  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 24600 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 620 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 103A (Tc)  
Nimewo pwodwi baz APT100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology APT100F50J.

Pwodwi atribi APT100F50J APT100M50J APT10090BLLG APT10090BLL
Nimewo Pati APT100F50J APT100M50J APT10090BLLG APT10090BLL
Manifakti Microchip Technology Microchip Technology Microchip Technology APT
Kouran - Kontini Drain (Id) @ 25 ° C 103A (Tc) 103A (Tc) 12A (Tc) -
Dissipasyon pouvwa (Max) 960W (Tc) 960W (Tc) 298W (Tc) -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (th) (Max) @ Id 5V @ 5mA 5V @ 5mA 5V @ 1mA -
Nimewo pwodwi baz APT100 APT100 APT10090 -
Pòtay Charge (Qg) (Max) @ Vgs 620 nC @ 10 V 620 nC @ 10 V 71 nC @ 10 V -
Pakèt Tube Tube Tube -
Vgs (Max) ±30V ±30V ±30V -
Founisè Aparèy pake ISOTOP® SOT-227 TO-247 [B] -
Drenaj Sous Voltage (Vdss) 500 V 500 V 1000 V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Rds Sou (Max) @ Id, Vgs 36mOhm @ 75A, 10V 38mOhm @ 75A, 10V 950mOhm @ 6A, 10V -
Mounting Kalite Chassis Mount Chassis Mount Through Hole -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Seri POWER MOS 8™ - POWER MOS 7® -
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel -
Pake / Ka SOT-227-4, miniBLOC SOT-227-4, miniBLOC TO-247-3 -
Kapasite Antre (Ciss) (Max) @ Vds 24600 pF @ 25 V 24600 pF @ 25 V 1969 pF @ 25 V -

APT100F50J fich PDF

Download APT100F50J PDF fich ak dokiman Microchip Technology pou APT100F50J - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN Lòt
Integration 13/May/2020.pdf
Asanble PCN/orijin
Fab Site 27/Jul/2022.pdf

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Sètifikasyon & Manm

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APT100F50J Image

APT100F50J

Microchip Technology
32D-APT100F50J

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