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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleAPT30GP60BDQ1G
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APT30GP60BDQ1G - Microchip Technology

Manifakti Nimewo Pati
APT30GP60BDQ1G
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-APT30GP60BDQ1G
ECAD modèl
Pati Deskripsyon
IGBT 600V 100A 463W TO247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
APT30GP60BDQ1G.pdf
RoHs Status
Nan stok: 4168

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Espesifikasyon

Espesifikasyon APT30GP60BDQ1G Tech
Microchip Technology - APT30GP60BDQ1G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - APT30GP60BDQ1G

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.7V @ 15V, 30A  
Kondisyon tès 400V, 30A, 5Ohm, 15V  
Td (sou / sou) @ 25 ° C 13ns/55ns  
Oblije chanje enèji 260µJ (on), 250µJ (off)  
Founisè Aparèy pake TO-247 [B]  
Seri POWER MOS 7®  
Pouvwa - Max 463 W  
Pake / Ka TO-247-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite PT  
Gate Charge 90 nC  
Kouran - Pèseptè Pulsed (Icm) 120 A  
Kouran - Pèseptè (Ic) (Max) 100 A  
Nimewo pwodwi baz APT30GP60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology APT30GP60BDQ1G.

Pwodwi atribi APT30GP60BDQ1G APT30GP60BG APT30GN60BG APT30GT60BRDQ2G
Nimewo Pati APT30GP60BDQ1G APT30GP60BG APT30GN60BG APT30GT60BRDQ2G
Manifakti Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Pakèt Tube Tube Tube Tube
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 600 V 600 V
Td (sou / sou) @ 25 ° C 13ns/55ns 13ns/55ns 12ns/155ns 12ns/225ns
IGBT Kalite PT PT Trench Field Stop NPT
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Seri POWER MOS 7® POWER MOS 7® - Thunderbolt IGBT®
Founisè Aparèy pake TO-247 [B] TO-247 [B] TO-247 [B] TO-247 [B]
Nimewo pwodwi baz APT30GP60 APT30GP60 APT30GN60 APT30GT60
Kondisyon tès 400V, 30A, 5Ohm, 15V 400V, 30A, 5Ohm, 15V 400V, 30A, 4.3Ohm, 15V 400V, 30A, 10Ohm, 15V
Kouran - Pèseptè Pulsed (Icm) 120 A 100 A 90 A 110 A
Pouvwa - Max 463 W 463 W 203 W 250 W
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Kalite Antre Standard Standard Standard Standard
Oblije chanje enèji 260µJ (on), 250µJ (off) 260µJ (on), 250µJ (off) 525µJ (on), 700µJ (off) 80µJ (on), 605µJ (off)
Gate Charge 90 nC 90 nC 165 nC 7.5 nC
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Vce (sou) (Max) @ Vge, Ic 2.7V @ 15V, 30A 2.7V @ 15V, 30A 1.9V @ 15V, 30A 2.5V @ 15V, 30A
Kouran - Pèseptè (Ic) (Max) 100 A 100 A 63 A 64 A

APT30GP60BDQ1G fich PDF

Download APT30GP60BDQ1G PDF fich ak dokiman Microchip Technology pou APT30GP60BDQ1G - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN Lòt
Integration 13/May/2020.pdf
Asanble PCN/orijin
Wafer Fabrication Site 27/Oct/2021.pdf

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Microchip Technology

APT30GP60BDQ1G

Microchip Technology
32D-APT30GP60BDQ1G

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