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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAPT6030BN
Microsemi Corporation
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APT6030BN - Microsemi Corporation

Manifakti Nimewo Pati
APT6030BN
Manifakti
Microsemi
Allelco Nimewo Pati
32D-APT6030BN
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 23A TO247AD
Deskripsyon detaye
Pake
TO-247-3
Done fèy
APT5025BN, APT5030BN.pdf
Nan stok: 3610

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon APT6030BN Tech
Microsemi Corporation - APT6030BN espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microsemi Corporation - APT6030BN

Pwodwi atribi Valè atribi  
Manifakti Microsemi  
Vgs (th) (Max) @ Id 4V @ 1mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247AD  
Seri POWER MOS IV®  
Rds Sou (Max) @ Id, Vgs 300mOhm @ 11.5A, 10V  
Dissipasyon pouvwa (Max) 360W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3500 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 210 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microsemi Corporation APT6030BN.

Pwodwi atribi APT6030BN APT6017JFLL APT6038BLLG APT6040BN
Nimewo Pati APT6030BN APT6017JFLL APT6038BLLG APT6040BN
Manifakti Microsemi Corporation Microchip Technology Microchip Technology Microsemi Corporation
Founisè Aparèy pake TO-247AD ISOTOP® TO-247 [B] TO-247AD
Mounting Kalite Through Hole Chassis Mount Through Hole Through Hole
Dissipasyon pouvwa (Max) 360W (Tc) - - 310W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 600 V 600 V 600 V 600 V
Pòtay Charge (Qg) (Max) @ Vgs 210 nC @ 10 V 100 nC @ 10 V 43 nC @ 10 V 130 nC @ 10 V
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 300mOhm @ 11.5A, 10V 170mOhm @ 15.5A, 10V 380mOhm @ 8.5A, 10V 400mOhm @ 9A, 10V
Pakèt Tube Tube Tube Tube
Vgs (Max) ±30V - - ±30V
Kapasite Antre (Ciss) (Max) @ Vds 3500 pF @ 25 V 4500 pF @ 25 V 1850 pF @ 25 V 2950 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - - 10V
Operating Tanperati -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 4V @ 1mA 5V @ 2.5mA 5V @ 1mA 4V @ 1mA
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Tc) 31A (Tc) 17A (Tc) 18A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri POWER MOS IV® POWER MOS 7® POWER MOS 7® POWER MOS IV®
Pake / Ka TO-247-3 SOT-227-4, miniBLOC TO-247-3 TO-247-3

APT6030BN fich PDF

Download APT6030BN PDF fich ak dokiman Microsemi Corporation pou APT6030BN - Microsemi Corporation.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN obsolescence/ eol
Legacy Prod EOL 1/Mar/2017.pdf
Fich
APT5025BN, APT5030BN.pdf

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Sètifikasyon & Manm

Wè plis
Microsemi Corporation

APT6030BN

Microsemi Corporation
32D-APT6030BN

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