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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB10NK60ZT4
STB10NK60ZT4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

STB10NK60ZT4 - STMicroelectronics

Manifakti Nimewo Pati
STB10NK60ZT4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB10NK60ZT4
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 10A D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STx10NK60Z.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 18039

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STB10NK60ZT4 Tech
STMicroelectronics - STB10NK60ZT4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB10NK60ZT4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri SuperMESH™  
Rds Sou (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V  
Dissipasyon pouvwa (Max) 115W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1370 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 70 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc)  
Nimewo pwodwi baz STB10  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB10NK60ZT4.

Pwodwi atribi STB10NK60ZT4 STB10N95K5 STB11N65M5 STB10NK60Z-1
Nimewo Pati STB10NK60ZT4 STB10N95K5 STB11N65M5 STB10NK60Z-1
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Nimewo pwodwi baz STB10 STB10 STB11 STB10N
Founisè Aparèy pake D2PAK D²PAK (TO-263) D²PAK (TO-263) I2PAK
Vgs (Max) ±30V ±30V ±25V ±30V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Drenaj Sous Voltage (Vdss) 600 V 950 V 650 V 600 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
FET Feature - - - -
Vgs (th) (Max) @ Id 4.5V @ 250µA 5V @ 100µA 5V @ 250µA 4.5V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 1370 pF @ 25 V 630 pF @ 100 V 644 pF @ 100 V 1370 pF @ 25 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA
Seri SuperMESH™ SuperMESH5™ MDmesh™ V SuperMESH™
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc) 8A (Tc) 9A (Tc) 10A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pòtay Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 22 nC @ 10 V 17 nC @ 10 V 70 nC @ 10 V
Dissipasyon pouvwa (Max) 115W (Tc) 130W (Tc) 85W (Tc) 115W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 800mOhm @ 4A, 10V 480mOhm @ 4.5A, 10V 750mOhm @ 4.5A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel

STB10NK60ZT4 fich PDF

Download STB10NK60ZT4 PDF fich ak dokiman STMicroelectronics pou STB10NK60ZT4 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
D2PAK Lead Modification 04/Oct/2013.pdf IPG-PWR/14/8422 11/Apr/2014.pdf
Fich
STx10NK60Z.pdf

Shipment

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STB10NK60ZT4 Image

STB10NK60ZT4

STMicroelectronics
32D-STB10NK60ZT4

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