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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB16NF06LT4
STB16NF06LT4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STB16NF06LT4 - STMicroelectronics

Manifakti Nimewo Pati
STB16NF06LT4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB16NF06LT4
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 16A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STB16NF06L.pdf
RoHs Status
Nan stok: 49400

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Espesifikasyon

Espesifikasyon STB16NF06LT4 Tech
STMicroelectronics - STB16NF06LT4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB16NF06LT4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 1V @ 250µA (Min)  
Vgs (Max) ±16V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri STripFET™  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 45W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 345 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc)  
Nimewo pwodwi baz STB16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB16NF06LT4.

Pwodwi atribi STB16NF06LT4 STB16N65M5 STB160N75F3 STB16NS25T4
Nimewo Pati STB16NF06LT4 STB16N65M5 STB160N75F3 STB16NS25T4
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vgs (th) (Max) @ Id 1V @ 250µA (Min) 5V @ 250µA 4V @ 250µA 4V @ 250µA
Dissipasyon pouvwa (Max) 45W (Tc) 90W (Tc) 330W (Tc) 140W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 31 nC @ 10 V 85 nC @ 10 V 80 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 345 pF @ 25 V 1250 pF @ 100 V 6750 pF @ 25 V 1270 pF @ 25 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V 10V 10V 10V
Nimewo pwodwi baz STB16 STB16N STB160 STB16N
Seri STripFET™ MDmesh™ V STripFET™ MESH OVERLAY™
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 90mOhm @ 8A, 10V 299mOhm @ 6A, 10V 4mOhm @ 60A, 10V 280mOhm @ 8A, 10V
Operating Tanperati -55°C ~ 175°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Tc) 12A (Tc) 120A (Tc) 16A (Tc)
Founisè Aparèy pake D2PAK D²PAK (TO-263) D2PAK D2PAK
Drenaj Sous Voltage (Vdss) 60 V 650 V 75 V 250 V
Vgs (Max) ±16V ±25V ±20V ±20V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB16NF06LT4 fich PDF

Download STB16NF06LT4 PDF fich ak dokiman STMicroelectronics pou STB16NF06LT4 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
D2PAK Lead Modification 04/Oct/2013.pdf IPG-PWR/14/8422 11/Apr/2014.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 18/Oct/2019.pdf
Fich
STB16NF06L.pdf

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STB16NF06LT4 Image

STB16NF06LT4

STMicroelectronics
32D-STB16NF06LT4

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