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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB25N80K5
STB25N80K5 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STB25N80K5 - STMicroelectronics

Manifakti Nimewo Pati
STB25N80K5
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB25N80K5
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 19.5A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STx25N80K5.pdf
RoHs Status
Nan stok: 11272

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Espesifikasyon

Espesifikasyon STB25N80K5 Tech
STMicroelectronics - STB25N80K5 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB25N80K5

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 100µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri SuperMESH5™  
Rds Sou (Max) @ Id, Vgs 260mOhm @ 19.5A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1600 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 19.5A (Tc)  
Nimewo pwodwi baz STB25  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB25N80K5.

Pwodwi atribi STB25N80K5 STB25NM60N STB24N60M2 STB24NM60N
Nimewo Pati STB25N80K5 STB25NM60N STB24N60M2 STB24NM60N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Dissipasyon pouvwa (Max) 250W (Tc) 160W (Tc) 150W (Tc) 125W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 1600 pF @ 100 V 2400 pF @ 50 V 1060 pF @ 100 V 1400 pF @ 50 V
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Nimewo pwodwi baz STB25 STB25N STB24 STB24
Founisè Aparèy pake D²PAK (TO-263) D2PAK D²PAK (TO-263) D²PAK (TO-263)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 19.5A (Tc) 21A (Tc) 18A (Tc) 17A (Tc)
FET Feature - - - -
Seri SuperMESH5™ MDmesh™ II MDmesh™ II Plus MDmesh™ II
Vgs (th) (Max) @ Id 5V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 800 V 600 V 600 V 600 V
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 84 nC @ 10 V 29 nC @ 10 V 46 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±30V ±25V ±25V ±30V
Rds Sou (Max) @ Id, Vgs 260mOhm @ 19.5A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V 190mOhm @ 8A, 10V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB25N80K5 fich PDF

Download STB25N80K5 PDF fich ak dokiman STMicroelectronics pou STB25N80K5 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
D2PAK Lead Modification 04/Oct/2013.pdf
Asanble PCN/orijin
IPD/15/9124 20/Mar/2015.pdf
Fich
STx25N80K5.pdf

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Sètifikasyon & Manm

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STB25N80K5 Image

STB25N80K5

STMicroelectronics
32D-STB25N80K5

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