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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB28N65M2
STB28N65M2 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STB28N65M2 - STMicroelectronics

Manifakti Nimewo Pati
STB28N65M2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB28N65M2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 20A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STx28N65M2.pdf
RoHs Status
Nan stok: 13428

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Espesifikasyon

Espesifikasyon STB28N65M2 Tech
STMicroelectronics - STB28N65M2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB28N65M2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri MDmesh™ M2  
Rds Sou (Max) @ Id, Vgs 180mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 170W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1440 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc)  
Nimewo pwodwi baz STB28  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB28N65M2.

Pwodwi atribi STB28N65M2 STB270N4F3 STB27NM60ND STB26NM60N
Nimewo Pati STB28N65M2 STB270N4F3 STB27NM60ND STB26NM60N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Nimewo pwodwi baz STB28 STB270 STB27N STB26
Vgs (Max) ±25V ±20V ±25V ±30V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Seri MDmesh™ M2 Automotive, AEC-Q101, STripFET™ III Automotive, AEC-Q101, FDmesh™ II MDmesh™ II
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati 150°C (TJ) -55°C ~ 175°C (TJ) 150°C (TJ) 150°C (TJ)
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 150 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V
Founisè Aparèy pake D²PAK (TO-263) D2PAK D²PAK (TO-263) D²PAK (TO-263)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 1440 pF @ 100 V 7400 pF @ 25 V 2400 pF @ 50 V 1800 pF @ 50 V
Dissipasyon pouvwa (Max) 170W (Tc) 330W (Tc) 160W (Tc) 140W (Tc)
Rds Sou (Max) @ Id, Vgs 180mOhm @ 10A, 10V 2.5mOhm @ 80A, 10V 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Tc) 160A (Tc) 21A (Tc) 20A (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drenaj Sous Voltage (Vdss) 650 V 40 V 600 V 600 V
FET Feature - - - -

STB28N65M2 fich PDF

Download STB28N65M2 PDF fich ak dokiman STMicroelectronics pou STB28N65M2 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
Asanble PCN/orijin
Mult Dev Wafer Site Add 3/Aug/2018.pdf
Fich
STx28N65M2.pdf

Shipment

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Sètifikasyon & Manm

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STB28N65M2 Image

STB28N65M2

STMicroelectronics
32D-STB28N65M2

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