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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB45N60DM2AG
STB45N60DM2AG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STB45N60DM2AG - STMicroelectronics

Manifakti Nimewo Pati
STB45N60DM2AG
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB45N60DM2AG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 34A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STB45N60DM2AG.pdf
RoHs Status
Nan stok: 9433

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon STB45N60DM2AG Tech
STMicroelectronics - STB45N60DM2AG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB45N60DM2AG

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri Automotive, AEC-Q101, MDmesh™ DM2  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 17A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 34A (Tc)  
Nimewo pwodwi baz STB45  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB45N60DM2AG.

Pwodwi atribi STB45N60DM2AG STB45N65M5 STB45N30M5 STB46NF30
Nimewo Pati STB45N60DM2AG STB45N65M5 STB45N30M5 STB46NF30
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 250W (Tc) 210W (Tc) 250W (Tc) 300W (Tc)
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 600 V 650 V 300 V 300 V
Pòtay Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 91 nC @ 10 V 95 nC @ 10 V 90 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 90mOhm @ 17A, 10V 78mOhm @ 19.5A, 10V 40mOhm @ 26.5A, 10V 75mOhm @ 17A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 34A (Tc) 35A (Tc) 53A (Tc) 42A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz STB45 STB45 STB45 STB46
Seri Automotive, AEC-Q101, MDmesh™ DM2 MDmesh™ V MDmesh™ M5 STripFET™ II
Vgs (Max) ±25V ±25V ±25V ±20V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Vgs (th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 2500 pF @ 100 V 3375 pF @ 100 V 4240 pF @ 100 V 3200 pF @ 25 V

STB45N60DM2AG fich PDF

Download STB45N60DM2AG PDF fich ak dokiman STMicroelectronics pou STB45N60DM2AG - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 19/Dec/2018.pdf
Fich
STB45N60DM2AG.pdf

Shipment

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Sètifikasyon & Manm

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STB45N60DM2AG Image

STB45N60DM2AG

STMicroelectronics
32D-STB45N60DM2AG

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