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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTB80NF03L-04T4
STB80NF03L-04T4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STB80NF03L-04T4 - STMicroelectronics

Manifakti Nimewo Pati
STB80NF03L-04T4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STB80NF03L-04T4
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 80A D2PAK
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STB80NF03L-04T4.pdf
RoHs Status
Nan stok: 20300

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STB80NF03L-04T4 Tech
STMicroelectronics - STB80NF03L-04T4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STB80NF03L-04T4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D2PAK  
Seri STripFET™ II  
Rds Sou (Max) @ Id, Vgs 4mOhm @ 40A, 10V  
Dissipasyon pouvwa (Max) 300W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -60°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5500 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc)  
Nimewo pwodwi baz STB80  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STB80NF03L-04T4.

Pwodwi atribi STB80NF03L-04T4 STB80N20M5 STB80NE03L-06T4 STB80NF10T4
Nimewo Pati STB80NF03L-04T4 STB80N20M5 STB80NE03L-06T4 STB80NF10T4
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kouran - Kontini Drain (Id) @ 25 ° C 80A (Tc) 61A (Tc) 80A (Tc) 80A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±25V ±20V ±20V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nimewo pwodwi baz STB80 STB80 STB80N STB80
Kapasite Antre (Ciss) (Max) @ Vds 5500 pF @ 25 V 4329 pF @ 50 V 6500 pF @ 25 V 5500 pF @ 25 V
Founisè Aparèy pake D2PAK D2PAK D2PAK D2PAK
Drenaj Sous Voltage (Vdss) 30 V 200 V 30 V 100 V
Dissipasyon pouvwa (Max) 300W (Tc) 190W (Tc) 150W (Tc) 300W (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 1V @ 250µA 5V @ 250µA 2.5V @ 250µA 4V @ 250µA
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 4.5V, 10V 10V
Seri STripFET™ II MDmesh™ V STripFET™ STripFET™ II
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 4.5 V 104 nC @ 10 V 130 nC @ 5 V 182 nC @ 10 V
Operating Tanperati -60°C ~ 175°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 4mOhm @ 40A, 10V 23mOhm @ 30.5A, 10V 6mOhm @ 40A, 10V 15mOhm @ 40A, 10V

STB80NF03L-04T4 fich PDF

Download STB80NF03L-04T4 PDF fich ak dokiman STMicroelectronics pou STB80NF03L-04T4 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
D2PAK Lead Modification 04/Oct/2013.pdf Power MOSFET 14/Dec/2016.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 18/Oct/2019.pdf
PCN obsolescence/ eol
EOL NOTICE 25/Jan/2023.pdf
Fich
STB80NF03L-04T4.pdf

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STB80NF03L-04T4 Image

STB80NF03L-04T4

STMicroelectronics
32D-STB80NF03L-04T4

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