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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTD10NM60ND
STD10NM60ND Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STD10NM60ND - STMicroelectronics

Manifakti Nimewo Pati
STD10NM60ND
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STD10NM60ND
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 8A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
STD10NM60ND.pdf
RoHs Status
Nan stok: 27269

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Kantite

Espesifikasyon

Espesifikasyon STD10NM60ND Tech
STMicroelectronics - STD10NM60ND espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STD10NM60ND

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DPAK  
Seri FDmesh™ II  
Rds Sou (Max) @ Id, Vgs 600mOhm @ 4A, 10V  
Dissipasyon pouvwa (Max) 70W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 577 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Tc)  
Nimewo pwodwi baz STD10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STD10NM60ND.

Pwodwi atribi STD10NM60ND STD10NM50N STD10P6F6 STD10PF06-1
Nimewo Pati STD10NM60ND STD10NM50N STD10P6F6 STD10PF06-1
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vgs (th) (Max) @ Id 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Fèt tip N-Channel N-Channel P-Channel P-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 8A (Tc) 7A (Tc) 10A (Tc) 10A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Drenaj Sous Voltage (Vdss) 600 V 500 V 60 V 60 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA
Vgs (Max) ±25V ±25V ±20V ±20V
FET Feature - - - -
Nimewo pwodwi baz STD10 STD10 STD10 STD10
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 600mOhm @ 4A, 10V 630mOhm @ 3.5A, 10V 160mOhm @ 5A, 10V 200mOhm @ 5A, 10V
Seri FDmesh™ II MDmesh™ II DeepGATE™, STripFET™ VI STripFET™ II
Kapasite Antre (Ciss) (Max) @ Vds 577 pF @ 50 V 450 pF @ 50 V 340 pF @ 48 V 850 pF @ 25 V
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) 175°C (TJ) 175°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Founisè Aparèy pake DPAK DPAK DPAK I-PAK
Dissipasyon pouvwa (Max) 70W (Tc) 70W (Tc) 35W (Tc) 40W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 17 nC @ 10 V 6.4 nC @ 10 V 21 nC @ 10 V

STD10NM60ND fich PDF

Download STD10NM60ND PDF fich ak dokiman STMicroelectronics pou STD10NM60ND - STMicroelectronics.

PCN anbalaj
Box Label Chg 28/Jul/2016.pdf Reel Design Change 22/Aug/2022.pdf
Asanble PCN/orijin
Assembly Site 22/Dec/2022.pdf

Shipment

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Sètifikasyon & Manm

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STD10NM60ND Image

STD10NM60ND

STMicroelectronics
32D-STD10NM60ND

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