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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTD16N65M5
STD16N65M5 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STD16N65M5 - STMicroelectronics

Manifakti Nimewo Pati
STD16N65M5
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STD16N65M5
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 650V 12A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
STB16N65M5, STD16N65M5.pdf
RoHs Status
Nan stok: 18027

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon STD16N65M5 Tech
STMicroelectronics - STD16N65M5 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STD16N65M5

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 5V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DPAK  
Seri MDmesh™ V  
Rds Sou (Max) @ Id, Vgs 299mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 90W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1250 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 45 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc)  
Nimewo pwodwi baz STD16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STD16N65M5.

Pwodwi atribi STD16N65M5 STD16N60M2 STD16N50M2 STD16N65M2
Nimewo Pati STD16N65M5 STD16N60M2 STD16N50M2 STD16N65M2
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kapasite Antre (Ciss) (Max) @ Vds 1250 pF @ 100 V 700 pF @ 100 V 710 pF @ 100 V 718 pF @ 100 V
Operating Tanperati 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 90W (Tc) 110W (Tc) 110W (Tc) 110W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 19 nC @ 10 V 19.5 nC @ 10 V 19.5 nC @ 10 V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) ±25V ±25V ±25V ±25V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Seri MDmesh™ V MDmesh™ M2 MDmesh™ MDmesh™ M2
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc) 12A (Tc) 13A (Tc) 11A (Tc)
Rds Sou (Max) @ Id, Vgs 299mOhm @ 6A, 10V 320mOhm @ 6A, 10V 280mOhm @ 6.5A, 10V 360mOhm @ 5.5A, 10V
Drenaj Sous Voltage (Vdss) 650 V 600 V 500 V 650 V
Nimewo pwodwi baz STD16 STD16 STD16 STD16
Founisè Aparèy pake DPAK DPAK TO-252, (D-Pak) DPAK
Vgs (th) (Max) @ Id 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA

STD16N65M5 fich PDF

Download STD16N65M5 PDF fich ak dokiman STMicroelectronics pou STD16N65M5 - STMicroelectronics.

PCN anbalaj
Box Label Chg 28/Jul/2016.pdf Mult Dev Inner Box Chg 9/Dec/2021.pdf
Asanble PCN/orijin
IPG-PWR/14/8552 23/Jun/2014.pdf
PCN konsepsyon/spesifikasyon
New Lead Frame Design 17/Mar/2023.pdf
Fich
STB16N65M5, STD16N65M5.pdf

Shipment

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Sètifikasyon & Manm

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STD16N65M5 Image

STD16N65M5

STMicroelectronics
32D-STD16N65M5

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