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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTD3NK80Z-1
STD3NK80Z-1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STD3NK80Z-1 - STMicroelectronics

Manifakti Nimewo Pati
STD3NK80Z-1
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STD3NK80Z-1
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 2.5A IPAK
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
STx3NK80Z(-1).pdf
RoHs Status
Nan stok: 33900

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Kantite

Espesifikasyon

Espesifikasyon STD3NK80Z-1 Tech
STMicroelectronics - STD3NK80Z-1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STD3NK80Z-1

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 50µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-251 (IPAK)  
Seri SuperMESH™  
Rds Sou (Max) @ Id, Vgs 4.5Ohm @ 1.25A, 10V  
Dissipasyon pouvwa (Max) 70W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 485 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.5A (Tc)  
Nimewo pwodwi baz STD3NK80  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STD3NK80Z-1.

Pwodwi atribi STD3NK80Z-1 STD3NK60Z-1 STD3NM50T4 STD3NM60N
Nimewo Pati STD3NK80Z-1 STD3NK60Z-1 STD3NM50T4 STD3NM60N
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Rds Sou (Max) @ Id, Vgs 4.5Ohm @ 1.25A, 10V 3.6Ohm @ 1.2A, 10V 3Ohm @ 1.5A, 10V 1.8Ohm @ 1.65A, 10V
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Dissipasyon pouvwa (Max) 70W (Tc) 45W (Tc) 46W (Tc) 50W (Tc)
Vgs (th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 5V @ 250µA 4V @ 250µA
Seri SuperMESH™ SuperMESH™ MDmesh™ MDmesh™ II
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 800 V 600 V 550 V 600 V
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 11.8 nC @ 10 V 5.5 nC @ 10 V 9.5 nC @ 10 V
Nimewo pwodwi baz STD3NK80 STD3NK60 STD3N STD3
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Founisè Aparèy pake TO-251 (IPAK) I-PAK DPAK DPAK
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V ±30V ±25V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Kouran - Kontini Drain (Id) @ 25 ° C 2.5A (Tc) 2.4A (Tc) 3A (Tc) 3.3A (Tc)
Pakèt Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 485 pF @ 25 V 311 pF @ 25 V 140 pF @ 25 V 188 pF @ 50 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)

STD3NK80Z-1 fich PDF

Download STD3NK80Z-1 PDF fich ak dokiman STMicroelectronics pou STD3NK80Z-1 - STMicroelectronics.

PCN anbalaj
Box Label Chg 28/Jul/2016.pdf Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
Mult Change 03-May-2022.pdf
Fich
STx3NK80Z(-1).pdf

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Sètifikasyon & Manm

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STD3NK80Z-1 Image

STD3NK80Z-1

STMicroelectronics
32D-STD3NK80Z-1

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