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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTF11N60M2-EP
STF11N60M2-EP Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STF11N60M2-EP - STMicroelectronics

Manifakti Nimewo Pati
STF11N60M2-EP
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STF11N60M2-EP
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 7.5A TO220FP
Deskripsyon detaye
Pake
TO-220-3 Full Pack
Done fèy
STF11N60M2-EP.pdf
RoHs Status
Nan stok: 44110

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Espesifikasyon

Espesifikasyon STF11N60M2-EP Tech
STMicroelectronics - STF11N60M2-EP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STF11N60M2-EP

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.75V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220FP  
Seri MDmesh™ M2-EP  
Rds Sou (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V  
Dissipasyon pouvwa (Max) 25W (Tc)  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7.5A (Tc)  
Nimewo pwodwi baz STF11  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STF11N60M2-EP.

Pwodwi atribi STF11N60M2-EP STF11N65K3 STF11N65M2 STF11N50M2
Nimewo Pati STF11N60M2-EP STF11N65K3 STF11N65M2 STF11N50M2
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Pake / Ka TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Pòtay Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V 42 nC @ 10 V 12.5 nC @ 10 V 12 nC @ 10 V
FET Feature - - - -
Dissipasyon pouvwa (Max) 25W (Tc) 35W (Tc) 25W (Tc) 25W (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V 850mOhm @ 3.6A, 10V 670mOhm @ 3.5A, 10V 530mOhm @ 4A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 7.5A (Tc) 11A (Tc) 7A (Tc) 8A (Tc)
Pakèt Tube Tube Tube Tube
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-220FP TO-220FP TO-220FP TO-220FP
Nimewo pwodwi baz STF11 STF11 STF11 STF11
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±25V ±30V ±25V ±25V
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 100 V 1180 pF @ 50 V 410 pF @ 100 V 395 pF @ 100 V
Vgs (th) (Max) @ Id 4.75V @ 250µA 4.5V @ 100µA 4V @ 250µA 4V @ 250µA
Seri MDmesh™ M2-EP SuperMESH3™ MDmesh™ II Plus MDmesh™ II Plus
Drenaj Sous Voltage (Vdss) 600 V 650 V 650 V 500 V

STF11N60M2-EP fich PDF

Download STF11N60M2-EP PDF fich ak dokiman STMicroelectronics pou STF11N60M2-EP - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Gate threshold voltage 10/Apr/2018.pdf
Fich
STF11N60M2-EP.pdf

Shipment

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Sètifikasyon & Manm

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STF11N60M2-EP Image

STF11N60M2-EP

STMicroelectronics
32D-STF11N60M2-EP

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