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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSTGB10NB60ST4
STGB10NB60ST4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

STGB10NB60ST4 - STMicroelectronics

Manifakti Nimewo Pati
STGB10NB60ST4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STGB10NB60ST4
ECAD modèl
Pati Deskripsyon
IGBT 600V 29A 80W D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STG(B,P)10NB60S.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 5360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STGB10NB60ST4 Tech
STMicroelectronics - STGB10NB60ST4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STGB10NB60ST4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 1.75V @ 15V, 10A  
Kondisyon tès 480V, 10A, 1kOhm, 15V  
Td (sou / sou) @ 25 ° C 700ns/1.2µs  
Oblije chanje enèji 600µJ (on), 5mJ (off)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri PowerMESH™  
Pouvwa - Max 80 W  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 33 nC  
Kouran - Pèseptè Pulsed (Icm) 80 A  
Kouran - Pèseptè (Ic) (Max) 29 A  
Nimewo pwodwi baz STGB10  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STGB10NB60ST4.

Pwodwi atribi STGB10NB60ST4 STGB10H60DF STGB10M65DF2 STGB10NC60HDT4
Nimewo Pati STGB10NB60ST4 STGB10H60DF STGB10M65DF2 STGB10NC60HDT4
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Founisè Aparèy pake D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK
Kouran - Pèseptè (Ic) (Max) 29 A 20 A 20 A 20 A
Pouvwa - Max 80 W 115 W 115 W 65 W
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kouran - Pèseptè Pulsed (Icm) 80 A 40 A 40 A 30 A
Oblije chanje enèji 600µJ (on), 5mJ (off) 83µJ (on), 140µJ (off) 120µJ (on), 270µJ (off) 31.8µJ (on), 95µJ (off)
Kondisyon tès 480V, 10A, 1kOhm, 15V 400V, 10A, 10Ohm, 15V 400V, 10A, 22Ohm, 15V 390V, 5A, 10Ohm, 15V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 650 V 600 V
Td (sou / sou) @ 25 ° C 700ns/1.2µs 19.5ns/103ns 19ns/91ns 14.2ns/72ns
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kalite Antre Standard Standard Standard Standard
Vce (sou) (Max) @ Vge, Ic 1.75V @ 15V, 10A 1.95V @ 15V, 10A 2V @ 15V, 10A 2.5V @ 15V, 5A
IGBT Kalite - Trench Field Stop Trench Field Stop -
Nimewo pwodwi baz STGB10 STGB10 STGB10 STGB10
Gate Charge 33 nC 57 nC 28 nC 19.2 nC
Seri PowerMESH™ - - PowerMESH™

STGB10NB60ST4 fich PDF

Download STGB10NB60ST4 PDF fich ak dokiman STMicroelectronics pou STGB10NB60ST4 - STMicroelectronics.

Fich
STG(B,P)10NB60S.pdf

Shipment

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Sètifikasyon & Manm

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STGB10NB60ST4 Image

STGB10NB60ST4

STMicroelectronics
32D-STGB10NB60ST4

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