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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSTGB20NC60VT4
STGB20NC60VT4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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STGB20NC60VT4 - STMicroelectronics

Manifakti Nimewo Pati
STGB20NC60VT4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STGB20NC60VT4
ECAD modèl
Pati Deskripsyon
IGBT 600V 60A 200W D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STG(B,P,W)20NC60V Datasheet.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 4980

Jaden obligatwa yo endike pa yon asterisk (*)
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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STGB20NC60VT4 Tech
STMicroelectronics - STGB20NC60VT4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STGB20NC60VT4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.5V @ 15V, 20A  
Kondisyon tès 390V, 20A, 3.3Ohm, 15V  
Td (sou / sou) @ 25 ° C 31ns/100ns  
Oblije chanje enèji 220µJ (on), 330µJ (off)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri PowerMESH™  
Pouvwa - Max 200 W  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 100 nC  
Kouran - Pèseptè Pulsed (Icm) 100 A  
Kouran - Pèseptè (Ic) (Max) 60 A  
Nimewo pwodwi baz STGB20  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STGB20NC60VT4.

Pwodwi atribi STGB20NC60VT4 STGB20NB41LZT4 STGB30H60DF STGB30V60DF
Nimewo Pati STGB20NC60VT4 STGB20NB41LZT4 STGB30H60DF STGB30V60DF
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Td (sou / sou) @ 25 ° C 31ns/100ns 1µs/12.1µs 50ns/160ns 45ns/189ns
Nimewo pwodwi baz STGB20 STGB20 STGB30 STGB30
Kalite Antre Standard Standard Standard Standard
Gate Charge 100 nC 46 nC 105 nC 163 nC
Oblije chanje enèji 220µJ (on), 330µJ (off) 5mJ (on), 12.9mJ (off) 350µJ (on), 400µJ (off) 383µJ (on), 233µJ (off)
Kouran - Pèseptè (Ic) (Max) 60 A 40 A 60 A 60 A
Founisè Aparèy pake D²PAK (TO-263) D2PAK D2PAK D2PAK
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Voltage - Pèseptè Emitter pann (Max) 600 V 442 V 600 V 600 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IGBT Kalite - - Trench Field Stop Trench Field Stop
Kouran - Pèseptè Pulsed (Icm) 100 A 80 A 120 A 120 A
Pouvwa - Max 200 W 200 W 260 W 258 W
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri PowerMESH™ PowerMESH™ - -
Kondisyon tès 390V, 20A, 3.3Ohm, 15V 320V, 20A, 1kOhm, 5V 400V, 30A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vce (sou) (Max) @ Vge, Ic 2.5V @ 15V, 20A 2V @ 4.5V, 20A 2.4V @ 15V, 30A 2.3V @ 15V, 30A

STGB20NC60VT4 fich PDF

Download STGB20NC60VT4 PDF fich ak dokiman STMicroelectronics pou STGB20NC60VT4 - STMicroelectronics.

Fich
STG(B,P,W)20NC60V Datasheet.pdf

Shipment

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Sètifikasyon & Manm

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STGB20NC60VT4 Image

STGB20NC60VT4

STMicroelectronics
32D-STGB20NC60VT4

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