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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSTGW39NC60VD
STGW39NC60VD Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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STGW39NC60VD - STMicroelectronics

Manifakti Nimewo Pati
STGW39NC60VD
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STGW39NC60VD
ECAD modèl
Pati Deskripsyon
IGBT 600V 80A 250W TO247
Pake
TO-247-3
Done fèy
STGW39NC60VD.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 12035

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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STGW39NC60VD Tech
STMicroelectronics - STGW39NC60VD espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STGW39NC60VD

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.4V @ 15V, 30A  
Kondisyon tès 390V, 30A, 10Ohm, 15V  
Td (sou / sou) @ 25 ° C 33ns/178ns  
Oblije chanje enèji 333µJ (on), 537µJ (off)  
Founisè Aparèy pake TO-247-3  
Seri PowerMESH™  
Tan rekiperasyon ranvèse (trr) 45 ns  
Pouvwa - Max 250 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-247-3  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 126 nC  
Kouran - Pèseptè Pulsed (Icm) 220 A  
Kouran - Pèseptè (Ic) (Max) 80 A  
Nimewo pwodwi baz STGW39  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STGW39NC60VD.

Pwodwi atribi STGW39NC60VD STGW40H120F2 STGW35HF60W STGW40N120KD
Nimewo Pati STGW39NC60VD STGW40H120F2 STGW35HF60W STGW40N120KD
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Kondisyon tès 390V, 30A, 10Ohm, 15V 600V, 40A, 10Ohm, 15V 400V, 20A, 10Ohm, 15V 960V, 30A, 10Ohm, 15V
Kalite Antre Standard Standard Standard Standard
Founisè Aparèy pake TO-247-3 TO-247-3 TO-247-3 TO-247-3
Kouran - Pèseptè Pulsed (Icm) 220 A 160 A 150 A 120 A
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Td (sou / sou) @ 25 ° C 33ns/178ns 18ns/152ns 30ns/175ns 48ns/338ns
Voltage - Pèseptè Emitter pann (Max) 600 V 1200 V 600 V 1200 V
Tan rekiperasyon ranvèse (trr) 45 ns - - 84 ns
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 125°C (TJ)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Oblije chanje enèji 333µJ (on), 537µJ (off) 1mJ (on), 1.32mJ (off) 290µJ (on), 185µJ (off) 3.7mJ (on), 5.7mJ (off)
Pakèt Tube Tube Tube Tube
Nimewo pwodwi baz STGW39 STGW40 STGW35 STGW40
Vce (sou) (Max) @ Vge, Ic 2.4V @ 15V, 30A 2.6V @ 15V, 40A 2.5V @ 15V, 20A 3.85V @ 15V, 30A
Gate Charge 126 nC 158 nC 140 nC 126 nC
Pouvwa - Max 250 W 468 W 200 W 240 W
Seri PowerMESH™ - - PowerMESH™
IGBT Kalite - Trench Field Stop - -
Kouran - Pèseptè (Ic) (Max) 80 A 80 A 60 A 80 A

STGW39NC60VD fich PDF

Download STGW39NC60VD PDF fich ak dokiman STMicroelectronics pou STGW39NC60VD - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
IPG/14/8475 16/May/2014.pdf
Fich
STGW39NC60VD.pdf

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STGW39NC60VD Image

STGW39NC60VD

STMicroelectronics
32D-STGW39NC60VD

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