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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTH110N10F7-6
STH110N10F7-6 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STH110N10F7-6 - STMicroelectronics

Manifakti Nimewo Pati
STH110N10F7-6
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STH110N10F7-6
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 110A H2PAK-6
Deskripsyon detaye
Pake
TO-263-7, D²Pak (6 Leads + Tab)
Done fèy
STH110N10F7-2,-6.pdf
RoHs Status
Nan stok: 4290

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Kantite

Espesifikasyon

Espesifikasyon STH110N10F7-6 Tech
STMicroelectronics - STH110N10F7-6 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STH110N10F7-6

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake H2PAK-6  
Seri DeepGATE™, STripFET™ VII  
Rds Sou (Max) @ Id, Vgs 6.5mOhm @ 55A, 10V  
Dissipasyon pouvwa (Max) 150W (Tc)  
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5117 pF @ 50 V  
Pòtay Charge (Qg) (Max) @ Vgs 72 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 110A (Tc)  
Nimewo pwodwi baz STH110  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STH110N10F7-6.

Pwodwi atribi STH110N10F7-6 STH140N8F7-2 STH110N10F7-2 STH12N120K5-2
Nimewo Pati STH110N10F7-6 STH140N8F7-2 STH110N10F7-2 STH12N120K5-2
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake H2PAK-6 H2Pak-2 H2Pak-2 H2Pak-2
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Dissipasyon pouvwa (Max) 150W (Tc) 200W (Tc) 150W (Tc) 250W (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 96 nC @ 10 V 72 nC @ 10 V 44.2 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 6.5mOhm @ 55A, 10V 4mOhm @ 45A, 10V 6.5mOhm @ 55A, 10V 690mOhm @ 6A, 10V
Pake / Ka TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 5V @ 100µA
Nimewo pwodwi baz STH110 STH140 STH110 STH12
Kouran - Kontini Drain (Id) @ 25 ° C 110A (Tc) 90A (Tc) 110A (Tc) 12A (Tc)
Seri DeepGATE™, STripFET™ VII DeepGATE™, STripFET™ VII DeepGATE™, STripFET™ VII MDmesh™ K5
Drenaj Sous Voltage (Vdss) 100 V 80 V 100 V 1200 V
Vgs (Max) ±20V ±20V ±20V ±30V
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 5117 pF @ 50 V 6340 pF @ 40 V 5117 pF @ 50 V 1370 pF @ 100 V

STH110N10F7-6 fich PDF

Download STH110N10F7-6 PDF fich ak dokiman STMicroelectronics pou STH110N10F7-6 - STMicroelectronics.

PCN obsolescence/ eol
Mosfet EOL 6/Apr/2018.pdf
Asanble PCN/orijin
STripFET 21/Jul/2017.pdf
Fich
STH110N10F7-2,-6.pdf

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Sètifikasyon & Manm

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STH110N10F7-6 Image

STH110N10F7-6

STMicroelectronics
32D-STH110N10F7-6

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