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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTH180N10F3-2
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STH180N10F3-2 - STMicroelectronics

Manifakti Nimewo Pati
STH180N10F3-2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STH180N10F3-2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 180A H2PAK-2
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STH180N10F3-2.pdf
RoHs Status
Nan stok: 13541

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon STH180N10F3-2 Tech
STMicroelectronics - STH180N10F3-2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STH180N10F3-2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake H2Pak-2  
Seri STripFET™ III  
Rds Sou (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V  
Dissipasyon pouvwa (Max) 315W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6665 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc)  
Nimewo pwodwi baz STH180  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STH180N10F3-2.

Pwodwi atribi STH180N10F3-2 STH175N4F6-6AG STH160N4LF6-2 STH185N10F3-2
Nimewo Pati STH180N10F3-2 STH175N4F6-6AG STH160N4LF6-2 STH185N10F3-2
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vgs (Max) ±20V ±20V ±20V ±20V
Seri STripFET™ III Automotive, AEC-Q101, STripFET™ F6 DeepGATE™, STripFET™ VI Automotive, AEC-Q101, STripFET™ F3
Pòtay Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V 130 nC @ 10 V 181 nC @ 10 V 114.6 nC @ 10 V
Founisè Aparèy pake H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V 2.4mOhm @ 60A, 10V 2.2mOhm @ 60A, 10V 4.5mOhm @ 60A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc) 120A (Tc) 120A (Tc) 180A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 6665 pF @ 25 V 7735 pF @ 20 V 8130 pF @ 20 V 6665 pF @ 25 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz STH180 STH175 STH160 STH185
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 1V @ 250µA (Min) 4V @ 250µA
Dissipasyon pouvwa (Max) 315W (Tc) 150W (Tc) 150W (Tc) 315W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 5V, 10V 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 100 V 40 V 40 V 100 V

STH180N10F3-2 fich PDF

Download STH180N10F3-2 PDF fich ak dokiman STMicroelectronics pou STH180N10F3-2 - STMicroelectronics.

PCN anbalaj
Mult Dev Inner Box Chg 9/Dec/2021.pdf
PCN konsepsyon/spesifikasyon
SCTx/SCTx/STHx/STPSCx/STTHx/TN4050HP 26/Jul/2022.pdf
Fich
STH180N10F3-2.pdf

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STMicroelectronics

STH180N10F3-2

STMicroelectronics
32D-STH180N10F3-2

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