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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTH185N10F3-2
STMicroelectronics
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STH185N10F3-2 - STMicroelectronics

Manifakti Nimewo Pati
STH185N10F3-2
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STH185N10F3-2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 180A H2PAK-2
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STH185N10F3-2.pdf
RoHs Status
Nan stok: 4500

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon STH185N10F3-2 Tech
STMicroelectronics - STH185N10F3-2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STH185N10F3-2

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake H2Pak-2  
Seri Automotive, AEC-Q101, STripFET™ F3  
Rds Sou (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V  
Dissipasyon pouvwa (Max) 315W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6665 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc)  
Nimewo pwodwi baz STH185  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STH185N10F3-2.

Pwodwi atribi STH185N10F3-2 STH210N75F6-2 STH240N10F7-2 STH160N4LF6-2
Nimewo Pati STH185N10F3-2 STH210N75F6-2 STH240N10F7-2 STH160N4LF6-2
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 6665 pF @ 25 V 11800 pF @ 25 V 11550 pF @ 25 V 8130 pF @ 20 V
Founisè Aparèy pake H2Pak-2 H2Pak-2 H2Pak-2 H2Pak-2
Pòtay Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V 171 nC @ 10 V 160 nC @ 10 V 181 nC @ 10 V
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 180A (Tc) 180A (Tc) 180A (Tc) 120A (Tc)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 315W (Tc) 300W (Tc) 300W (Tc) 150W (Tc)
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Drenaj Sous Voltage (Vdss) 100 V 75 V 100 V 40 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 1V @ 250µA (Min)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 5V, 10V
Rds Sou (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V 2.8mOhm @ 90A, 10V 2.5mOhm @ 60A, 10V 2.2mOhm @ 60A, 10V
Nimewo pwodwi baz STH185 STH210 STH240 STH160
Vgs (Max) ±20V ±20V ±20V ±20V
Seri Automotive, AEC-Q101, STripFET™ F3 DeepGATE™, STripFET™ VI STripFET™ DeepGATE™, STripFET™ VI

STH185N10F3-2 fich PDF

Download STH185N10F3-2 PDF fich ak dokiman STMicroelectronics pou STH185N10F3-2 - STMicroelectronics.

Asanble PCN/orijin
Mult Devices Testing 10/May/2018.pdf
PCN obsolescence/ eol
Mult Dev OBS 2/Apr/2020.pdf
Fich
STH185N10F3-2.pdf

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STMicroelectronics

STH185N10F3-2

STMicroelectronics
32D-STH185N10F3-2

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